Datasheet > SiSS71DN

SiSS71DN

更新时间： 2023-12-06 20:08:26

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	218K
描述
P-Channel 100 V (D-S) MOSFET

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SiSS71DN 数据手册

SiSS71DN

Vishay Siliconix

www.vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title

100

10000

1000

100

0.15

0.12

0.09

0.06

0.03

10000

I_D= 5 A

T_J= 150 °C

1000

T_J= 125 °C

T_J= 25 °C

100

T_J= 25 °C

0.1

0.2

0.4

0.6

0.8

1.0

1.2

V_GS- Gate-to-Source Voltage (V)

2nd line

V_SD- Source-to-Drain Voltage (V)

2nd line

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

Axis Title

2.0

1.8

1.6

1.4

1.2

1.0

10000

1000

100

I_D= 250 μA

0.001 0.01

0.1

100

1000

-50 -25

75 100 125 150

Time (s)

T_J- Temperature (°C)

2nd line

Threshold Voltage

Single Pulse Power, Junction-to-Ambient

Axis Title

100

10000

I_DMlimited

(1)

Limited by R_DS(on)

100 μs

1000

100

1 ms

0.1

I_Dlimited

10 ms

100 ms

1 s

10 s

T_A= 25 °C

Single pulse

BVDSS limited

0.01

0.1

100

1000

V_DS- Drain-to-Source Voltage (V)

> minimum V_GSat which R_DS(on)is specified

(1)

Safe Operating Area, Junction-to-Ambient

S16-1378-Rev. A, 11-Jul-16

Document Number: 76642

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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