Datasheet > SiSS71DN

SiSS71DN

更新时间： 2023-12-06 20:08:26

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	218K
描述
P-Channel 100 V (D-S) MOSFET

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SiSS71DN 数据手册

SiSS71DN

Vishay Siliconix

www.vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title

10000

1000

100

10000

1000

100

V_GS= 10 V to 6 V

V_GS= 5 V

V_GS= 4 V

T_C= 25 °C

V_GS= 3 V

T_C= 125 °C

T_C= -55 °C

V_DS- Drain-to-Source Voltage (V)

2nd line

V_GS- Gate-to-Source Voltage (V)

2nd line

Output Characteristics

Transfer Characteristics

Axis Title

0.16

0.12

0.08

0.04

10000

1000

100

1500

1200

900

600

300

10000

1000

100

C_iss

V_GS= 4.5 V

C_oss

V_GS= 10 V

C_rss

100

I_D- Drain Current (A)

2nd line

V_DS- Drain-to-Source Voltage (V)

2nd line

On-Resistance vs. Drain Current and Gate Voltage

Capacitance

Axis Title

10000

1000

100

1.8

1.6

1.4

1.2

1.0

0.8

0.6

10000

1000

100

I_D= 10 A

I_D= 5 A

V_GS= 10 V

V_DS= 50 V

V_GS= 4.5 V

V_DS= 25 V

V_DS= 80 V

-50 -25

75 100 125 150

Q_g- Total Gate Charge (nC)

2nd line

T_J- Junction Temperature (°C)

2nd line

Gate Charge

On-Resistance vs. Junction Temperature

S16-1378-Rev. A, 11-Jul-16

Document Number: 76642

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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