SiSS71DN
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
VGS = 0 V, ID = -250 μA
ID = -250 μA
-100
-
-
-
V
V
DS Temperature Coefficient
GS(th) Temperature Coefficient
-
-56
mV/°C
V
-
4.2
-
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS = VGS, ID = -250 μA
-1.5
-
-2.5
100
-1
V
IGSS
VDS = 0 V, VGS
=
20 V
-
-
-
nA
VDS = -100 V, VGS = 0 V
DS = -5 V, VGS = 0 V, TJ = 55 °C
VDS -5 V, VGS = -10 V
-
-
Zero Gate Voltage Drain Current
On-State Drain Current a
IDSS
ID(on)
RDS(on)
gfs
μA
A
V
-
-10
-
-5
-
-
VGS = -10 V, ID = -5 A
0.047
0.063
13
0.059
0.082
-
Drain-Source On-State Resistance a
S
VGS = -4.5 V, ID = -5 A
-
Forward Transconductance a
Dynamic b
VDS = -15 V, ID = -5 A
-
Input Capacitance
Ciss
Coss
Crss
-
-
1050
330
20
-
-
Output Capacitance
Reverse Transfer Capacitance
VDS = -50 V, VGS = 0 V, f = 1 MHz
VDS = -50 V, VGS = -10 V, ID = -10 A
VDS = -50 V, VGS = -4.5 V, ID = -10 A
f = 1 MHz
pF
-
-
-
20
30
15
-
Total Gate Charge
Qg
-
10
nC
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Qgs
Qgd
Rg
-
3.4
4.4
5.7
35
-
-
1.1
-
11.4
70
60
40
20
20
40
50
20
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
-
30
V
DD = -50 V, RL = 10 ,
ID -5 A, VGEN = -4.5 V, Rg = 1
Turn-Off Delay Time
Fall Time
-
21
-
11
ns
Turn-On Delay Time
Rise Time
-
10
-
18
V
DD = -50 V, RL = 10 ,
ID -5 A, VGEN = -10 V, Rg = 1
Turn-Off Delay Time
Fall Time
-
25
-
11
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current a
Body Diode Voltage
IS
ISM
VSD
trr
TC = 25 °C
IF = -5 A
-
-
-
-
-
-
-
-
-
-40 c
-40
-1.2
130
312
-
A
-0.83
65
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
ns
nC
Qrr
ta
156
37
IF = -5 A, dI/dt = 100 A/μs, TJ = 25 °C
ns
Reverse Recovery Rise Time
tb
28
-
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Package limited.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-1378-Rev. A, 11-Jul-16
Document Number: 76642
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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