Datasheet > SiSS64DN

SiSS64DN

更新时间： 2023-12-06 20:09:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	293K
描述
N-Channel 30 V (D-S) MOSFET

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SiSS64DN 数据手册

SiSS64DN

Vishay Siliconix

www.vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Duty Cycle = 0.5

0.2

Notes:

0.1

0.05

1. Duty Cycle, D =

0.02

2. Per Unit Base = R

= 63 °C/W

thJA

(t)

3. T - T = P

DM thJA

Single Pulse

4. Surface Mounted

0.01

0.0001

0.001

0.01

0.1

100

1000

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

0.1

0.0001

0.001

0.01

0.1

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?67294.

S17-0779-Rev. A, 22-May-17

Document Number: 67294

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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