Datasheet > SiSS64DN

SiSS64DN

更新时间： 2023-12-06 20:09:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	293K
描述
N-Channel 30 V (D-S) MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SiSS64DN 数据手册

SiSS64DN

Vishay Siliconix

www.vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

100

0.008

0.006

0.004

0.002

0.000

I_D= 10 A

T_J= 150 °C

T_J= 125 °C

T_J= 25 °C

0.1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V_GS- Gate-to-Source Voltage (V)

V_SD- Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

100

I_D= 250 μA

- 50 - 25

100 125 150

0.001

0.01

0.1

100

1000

T_J- Temperature (°C)

Time (s)

Threshold Voltage

Single Pulse Power, Junction-to-Ambient

1000

I_DMLimited

Limited by R_DS(on)

100

I_onLimited

100 μs

1 ms

10 ms

100 ms

1 s

10 s

0.1

0.01

T_A= 25 °C

BVDSS Limited

0.01

0.1

100

V_DS- Drain-to-Source Voltage (V)

* V_GS> minimum V_GSat which R_DS(on)is speciﬁed

Safe Operating Area

S17-0779-Rev. A, 22-May-17

Document Number: 67294

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 2 345 6 7...9

中文翻译

下载PDF

与SiSS64DN相关器件

型号	品牌	获取价格	描述	数据表
SiSS65DN	VISHAY	获取价格	P-Channel 30 V (D-S) MOSFET
SiSS66DN	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET with Schottky Diode
SISS66DN-T1-GE3	VISHAY	获取价格	Power Field-Effect Transistor,
SiSS67DN	VISHAY	获取价格	P-Channel 30 V (D-S) MOSFET
SiSS70DN	VISHAY	获取价格	N-Channel 125 V (D-S) MOSFET
SiSS71DN	VISHAY	获取价格	P-Channel 100 V (D-S) MOSFET
SiSS73DN	VISHAY	获取价格	P-Channel 150 V (D-S) MOSFET
SiSS76LDN	VISHAY	获取价格	N-Channel 70 V (D-S) MOSFET
SiSS78LDN	VISHAY	获取价格	N-Channel 70 V (D-S) MOSFET
SiSS80DN	VISHAY	获取价格	N-Channel 20 V (D-S) MOSFET