5秒后页面跳转
SIR484DP PDF预览

SIR484DP

更新时间: 2024-09-28 06:11:47
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 126K
描述
N-Channel 20-V (D-S) MOSFET

SIR484DP 数据手册

 浏览型号SIR484DP的Datasheet PDF文件第2页浏览型号SIR484DP的Datasheet PDF文件第3页浏览型号SIR484DP的Datasheet PDF文件第4页浏览型号SIR484DP的Datasheet PDF文件第5页浏览型号SIR484DP的Datasheet PDF文件第6页浏览型号SIR484DP的Datasheet PDF文件第7页 
SiR484DP  
Vishay Siliconix  
N-Channel 20-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free  
VDS (V)  
RDS(on) (Ω)  
Qg (Typ.)  
I
D (A)a, g  
20  
TrenchFET® Power MOSFET  
0.0083 at VGS = 10 V  
0.0115 at VGS = 4.5 V  
Low Thermal Resistance PowerPAK®  
20  
7.1 nC  
20  
Package with Low 1.07 mm Profile  
Optimized for High-Side Synchronous Rectifier  
Operation  
PowerPAK SO-8  
100 % Rg Tested  
100 % UIS Tested  
D
S
6.15 mm  
5.15 mm  
1
S
APPLICATIONS  
2
S
3
G
4
Notebook CPU Core  
- High-Side Switch  
D
G
8
POL  
D
7
D
6
D
5
S
Bottom View  
Ordering Information: SiR484DP-T1-GE3 (Lead (Pb)-free and Halogen-free)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Drain-Source Voltage  
Gate-Source Voltage  
Symbol  
VDS  
VGS  
Limit  
20  
Unit  
V
20  
20g  
TC = 25 °C  
C = 70 °C  
20g  
T
Continuous Drain Current (TJ = 150 °C)  
ID  
17.2b, c  
13.7b, c  
50  
20g  
3.2b, c  
22  
TA = 25 °C  
TA = 70 °C  
A
IDM  
IS  
Pulsed Drain Current  
TC = 25 °C  
Continuous Source-Drain Diode Current  
TA = 25 °C  
Single Pulse Avalanche Current  
Avalanche Energy  
IAS  
L = 0.1 mH  
EAS  
mJ  
W
24  
T
C = 25 °C  
C = 70 °C  
29.8  
19.0  
3.9b, c  
2.5b, c  
T
PD  
Maximum Power Dissipation  
TA = 25 °C  
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)d, e  
- 55 to 150  
260  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambientb, f  
Maximum Junction-to-Case (Drain)  
Symbol  
RthJA  
RthJC  
Typical  
27  
Maximum  
Unit  
t 10 s  
Steady State  
32  
°C/W  
3.5  
4.2  
Notes:  
a. Base on TC = 25 °C.  
b. Surface Mounted on 1" x 1" FR4 board.  
c. t = 10 s.  
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and  
is not required to ensure adequate bottom side solder interconnection.  
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.  
f. Maximum under Steady State conditions is 70 °C/W.  
g. Package Limited.  
Document Number: 69024  
S-82664-Rev. A, 03-Nov-08  
www.vishay.com  
1

与SIR484DP相关器件

型号 品牌 获取价格 描述 数据表
SIR484DP-T1-GE3 VISHAY

获取价格

Trans MOSFET N-CH 20V 17.2A 8-Pin PowerPAK SO T/R
SIR492DP VISHAY

获取价格

N-Channel 12-V (D-S) MOSFET
SIR492DP-T1-GE3 VISHAY

获取价格

N-Channel 12-V (D-S) MOSFET
SIR494DP VISHAY

获取价格

N-Channel 12-V (D-S) MOSFET
SIR494DP-T1-GE3 VISHAY

获取价格

N-Channel 12-V (D-S) MOSFET
SIR496DP VISHAY

获取价格

N-Channel 20 V (D-S) MOSFET
SiR500DP VISHAY

获取价格

N-Channel 30 V (D-S) 150 °C MOSFET
SIR-505STA47 ROHM

获取价格

Infrared light emitting diode, top view type
SIR-505STA47_07 ROHM

获取价格

Infrared light emitting diode, top view type
SIR5102DP VISHAY

获取价格

N-Channel 100 V (D-S) MOSFET