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SiR500DP PDF预览

SiR500DP

更新时间: 2024-10-01 14:54:27
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
9页 234K
描述
N-Channel 30 V (D-S) 150 °C MOSFET

SiR500DP 数据手册

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SiR500DP  
Vishay Siliconix  
www.vishay.com  
N-Channel 30 V (D-S) 150 °C MOSFET  
FEATURES  
• TrenchFET® Gen V power MOSFET  
PowerPAK® SO-8 Single  
D
D
7
8
• Very low RDS x Qg figure-of-merit (FOM)  
D
6
D
5
• Enables higher power density with very low  
RDS(on) and thermally enhanced compact  
package  
• 100 % Rg and UIS tested  
1
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
2
S
S
3
S
4
G
1
D
APPLICATIONS  
Top View  
Bottom View  
• DC/DC converter  
• POL  
PRODUCT SUMMARY  
VDS (V)  
30  
• Synchronous rectification  
G
RDS(on) max. (Ω) at VGS = 10 V  
RDS(on) max. (Ω) at VGS = 4.5 V  
Qg typ. (nC)  
0.00047  
0.00068  
54.3  
• Battery management  
• Power and load switch  
ID (A) a  
350.8  
S
N-Channel MOSFET  
Configuration  
Single  
ORDERING INFORMATION  
Package  
PowerPAK SO-8  
Lead (Pb)-free and halogen-free  
SIR500DP-T1-RE3  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
Drain-source voltage  
Gate-source voltage  
SYMBOL  
LIMIT  
30  
UNIT  
VDS  
VGS  
V
+16 / -12  
350.8  
280.7  
85.9 b  
68.7 b  
500  
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
Continuous drain current (TJ = 150 °C)  
ID  
A
Pulsed drain current (t = 100 μs)  
IDM  
IS  
TC = 25 °C  
TA = 25 °C  
94.6  
5.6 b, c  
Continuous source-drain diode current  
Single pulse avalanche current  
Single pulse avalanche energy  
IAS  
EAS  
50  
125  
104.1  
66.6  
6.25 b  
4 b  
L = 0.1 mH  
mJ  
W
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA =70 °C  
Maximum power dissipation  
PD  
Operating junction and storage temperature range  
Soldering recommendations (peak temperature) c  
TJ, Tstg  
-55 to +150  
260  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
RthJA  
RthJC  
TYPICAL  
15  
MAXIMUM  
UNIT  
Maximum junction-to-ambient b  
t < 10 s  
Steady state  
20  
1.2  
°C/W  
Maximum junction-to-case (drain)  
0.9  
Notes  
a. TC = 25 °C  
b. Surface mounted on 1" x 1" FR4 board  
c. t = 10 s  
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper  
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not  
required to ensure adequate bottom side solder interconnection  
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components  
f. Maximum under steady state conditions is 54 °C/W  
S20-0968-Rev. A, 21-Dec-2020  
Document Number: 66840  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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