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SIR-563ST3F-M PDF预览

SIR-563ST3F-M

更新时间: 2024-01-31 01:21:57
品牌 Logo 应用领域
罗姆 - ROHM 二极管
页数 文件大小 规格书
4页 74K
描述
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SIR-563ST3F-M 数据手册

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SIR-563ST3F  
Sensors  
Infrared light emitting diode, top view type  
SIR-563ST3F  
The SIR-563ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous  
efficiency and a 940nm peak wavelength suitable for silicon detectors. It has a wide radiation angle and is ideal for  
compact optical control equipment.  
zDimensions (Unit : mm)  
zApplications  
Optical control equipment  
Light source for remote control devices  
φ5.0 0.2  
Notes:  
1. Unspecified tolerance  
shall be 0.2.  
2. Dimension in parenthesis are  
show for reference.  
zFeatures  
1) High efficiency, high output PO=11.0mW (IF=50mA).  
2) Wide radiation angle θ1/2=15deg.  
3) Emission spectrum well suited to silicon detectors.  
(λP=940nm).  
40.6  
20.5  
4) Good current-optical output linearity.  
2
5) Long life, high reliability.  
1
(2.5)  
1 Anode  
2 Cathode  
zAbsolute maximum ratings (Ta = 25°C)  
Parameter  
Forward current  
Symbol  
Limits  
Unit  
mA  
V
I
F
100  
5.0  
Reverse voltage  
V
P
R
D
Power dissipation  
160  
mW  
A
Pulse forward current  
Operating temperature  
I
FP  
0.5  
Topr  
Tstg  
25 to +85  
40 to +85  
°C  
°C  
Storage temperature  
Pulse width=0.1msec, duty ratio 1%  
Rev.A  
1/3  

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