Datasheet > SIHG47N60E

SIHG47N60E

更新时间： 2024-01-10 23:24:49

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	185K
描述
E Series Power MOSFET

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SIHG47N60E 数据手册

SiHG47N60E

Vishay Siliconix

www.vishay.com

Peak Diode Recovery dV/dt Test Circuit

Circuit layout considerations

• Low stray inductance

• Ground plane

D.U.T.

• Low leakage inductance

current transformer

R_g

• dV/dt controlled by R_g

• Driver same type as D.U.T.

• I_SDcontrolled by duty factor “D”

• D.U.T. - device under test

V_DD

Driver gate drive

P.W.

D =

Period

_GS= 10 V^a

D.U.T. l_SDwaveform

D.U.T. V_DSwaveform

Reverse

recovery

current

Body diode forward

current

dI/dt

Diode recovery

dV/dt

V_DD

Re-applied

voltage

Body diode forward drop

Inductor current

I_SD

Ripple ≤ 5 %

Note

a. V_GS= 5 V for logic level devices

Fig. 18 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?91474.

S11-2089 Rev. B, 31-Oct-11

Document Number: 91474

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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