Datasheet > SIHG47N60E

SIHG47N60E

更新时间： 2024-01-17 05:11:09

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	185K
描述
E Series Power MOSFET

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中文翻译

获取价格

数据手册

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SIHG47N60E 数据手册

SiHG47N60E

Vishay Siliconix

www.vishay.com

1000

100

T = 150 °C

T = 25 °C

= 0 V

0.1

0.2

0.4

0.6

0.8

1.2

1.4

100

125

150

,Source-to-Drain Voltage (V)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

T_J, Case Temperature (°C)

Fig. 9 - Maximum Drain Current vs. Case Temperature

725

1000

Operation in this area limited

by R

700

675

650

625

600

575

550

DS(on)

I_DMLimited

100

100 µs

1 ms

10 ms

= 25 °C

= 150 °C

Single Pulse

BVDSS Limited

0.1

100

1000

V_DS- Drain-to-Source Voltage (V)

-60 -40 -20

20 40 60 80 100 120 140 160

* V_GS> minimum V_GSat which R_DS(on)is speciﬁed

T , Junction Temperature (°C)

Fig. 8 - Maximum Safe Operating Area

Fig. 10 - Temperature vs. Drain-to-Source Voltage

Duty Cycle = 0.5

0.2

0.1

0.05

0.1

0.02

Single Pulse

0.01

0.0001

0.001

0.01

0.1

Pulse Time (s)

Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case

S11-2089 Rev. B, 31-Oct-11

Document Number: 91474

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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