Datasheet > SIHG47N60E

SIHG47N60E

更新时间： 2024-01-16 03:42:34

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	185K
描述
E Series Power MOSFET

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数据手册

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SIHG47N60E 数据手册

SiHG47N60E

Vishay Siliconix

www.vishay.com

R_D

V_DS

Q_G

10 V

V_GS

D.U.T.

R_G

Q_GS

Q_GD

10 V

V_G

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

Charge

Fig. 12 - Switching Time Test Circuit

Fig. 16 - Basic Gate Charge Waveform

V_DS

Current regulator

Same type as D.U.T.

90 %

50 kΩ

12 V

0.2 µF

0.3 µF

10 %

V_GS

V_DS

D.U.T.

t_d(on)t_r

t_d(off)t_f

Fig. 13 - Switching Time Waveforms

V_GS

3 mA

I_G

I_D

V_DS

Current sampling resistors

Vary t_pto obtain

required I_AS

Fig. 17 - Gate Charge Test Circuit

D.U.T

I_AS

R_G

V_DD

10 V

0.01 Ω

t_p

Fig. 14 - Unclamped Inductive Test Circuit

V_DS

t_p

V_DD

V_DS

I_AS

Fig. 15 - Unclamped Inductive Waveforms

S11-2089 Rev. B, 31-Oct-11

Document Number: 91474

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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