IRFP450A, SiHFP450A
Vishay Siliconix
Power MOSFET
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
PRODUCT SUMMARY
VDS (V)
500
Available
R
DS(on) (Ω)
VGS = 10 V
0.40
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
RoHS*
Qg (Max.) (nC)
64
16
COMPLIANT
Q
Q
gs (nC)
gd (nC)
• Fully
Characterized
Capacitance
and
26
Avalanche Voltage and Current
Configuration
Single
• Effective Coss Specified
• Lead (Pb)-free Available
D
TO-247
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptable Power Supply
• High Speed Power Switching
G
S
TYPICAL SMPS TOPOLOGIES
• Two Transistor Forward
• Half Bridge, Full Bridge
• PFC Boost
D
S
N-Channel MOSFET
G
ORDERING INFORMATION
Package
TO-247
IRFP450APbF
SiHFP450A-E3
IRFP450A
Lead (Pb)-free
SnPb
SiHFP450A
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
500
V
VGS
30
T
C = 25 °C
14
Continuous Drain Current
V
GS at 10 V
ID
TC = 100 °C
8.7
A
Pulsed Drain Currenta
IDM
56
Linear Derating Factor
1.5
W/°C
mJ
A
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
760
14
EAR
19
190
mJ
W
Maximum Power Dissipation
TC = 25 °C
PD
Peak Diode Recovery dV/dtc
dV/dt
TJ, Tstg
4.1
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
- 55 to + 150
300d
°C
for 10 s
10
lbf · in
N · m
Mounting Torque
6-32 or M3 screw
1.1
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 7.8 mH, RG = 25 Ω, IAS = 14 A (see fig. 12).
c. ISD ≤ 14 A, dI/dt ≤ 130 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91230
S-81271-Rev. A, 16-Jun-08
www.vishay.com
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