SIHFP450LC

更新时间： 2024-10-17 06:11:43

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威世 - VISHAY		/
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描述
Power MOSFET

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SIHFP450LC 数据手册

IRFP450LC, SiHFP450LC

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

• Ultra Low Gate Charge

• Reduced Gate Drive Requirement

• Enhanced 30 V V_GSRating

• Reduced C_iss, C_oss, C_rss

• Isolated Central Mounting Hole

• Dynamic dV/dt Rated

V_DS(V)

500

Available

_DS(on)(Ω)

V_GS= 10 V

0.40

RoHS*

Q_g(Max.) (nC)

COMPLIANT

_gs(nC)

_gd(nC)

Configuration

Single

• Repetitive Avalanche Rated

• Lead (Pb)-free Available

DESCRIPTION

TO-247

This new series of low charge Power MOSFETs achieve

significantly lower gate charge over conventional MOSFETs.

Utilizing advanced Power MOSFET technology the device

improvements allow for reduced gate drive requirements,

faster switching speeds and increased total system savings.

These device improvements combined with the proven

ruggedness and reliability of Power MOSFETs offer the

designer a new standard in power transistors for switching

applications.

N-Channel MOSFET

The TO-247 package is preferred for commercial-industrial

applications where higher power levels preclude the use of

TO-220 devices. The TO-247 is similar but superior to the

earlier TO-218 package because of its isolated mounting

hole.

ORDERING INFORMATION

Package

TO-247

IRFP450LCPbF

SiHFP450LC-E3

IRFP450LC

Lead (Pb)-free

SnPb

SiHFP450LC

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

500

V_GS

T_C= 25 °C

T_C=100°C

Continuous Drain Current

_GSat 10 V

I_D

8.6

Pulsed Drain Current^a

I_DM

Linear Derating Factor

1.5

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

760

E_AR

190

Maximum Power Dissipation

T_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

3.5

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

lbf · in

N · m

Mounting Torque

6-32 or M3 screw

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, starting T_J= 25 °C, L = 7.0 mH, R_G= 25 Ω, I_AS= 14 A (see fig. 12).

c. I_SD≤ 14 A, dI/dt ≤ 130 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91231

S-81271-Rev. A, 16-Jun-08

www.vishay.com

12 3 4 5 6 7 8

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