SIHFP450N

更新时间： 2024-10-17 06:11:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	166K
描述
Power MOSFET

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数据手册

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SIHFP450N 数据手册

IRFP450N, SiHFP450N

Vishay Siliconix

Power MOSFET

FEATURES

• Low Gate Charge Q_gResults in Simple Drive

Requirement

PRODUCT SUMMARY

V_DS(V)

500

RoHS

R_DS(on)(Max.) (Ω)

Q_g(Max.) (nC)

V_GS= 10 V

0.37

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

COMPLIANT

• Fully

Characterized

Capacitance

and

_gs(nC)

_gd(nC)

Avalanche Voltage and Current

• Effective C_ossSpecified

• Lead (Pb)-free

Configuration

Single

APPLICATIONS

TO-247

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

TYPICAL SMPS TOPOLOGIES

• Two Transistor Forward

• Half Bridge and Full Bridge

• PFC Boost

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-247

IRFP450NPbF

SiHFP450N-E3

IRFP450N

Lead (Pb)-free

SnPb

SiHFP450N

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

500

V_GS

_C= 25 °C

Continuous Drain Current

V_GSat 10 V

I_D

T_C=100°C

8.8

Pulsed Drain Current^a

I_DM

Linear Derating Factor

1.6

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

170

E_AR

200

Maximum Power Dissipation

_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

5.0

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

6-32 or M3 screw

lbf · in

N · m

Mounting Torque

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T_J= 25 °C, L = 1.7 mH, R_G= 25 Ω, I_AS= 14 A (see fig. 12).

c. I_SD≤ 14 A, dI/dt ≤ 510 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

Document Number: 91232

S-Pending-Rev. b, 26-Jun-08

www.vishay.com

WORK-IN-PROGRESS

12 3 4 5 6 7 8

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