Datasheet > SIHFP360-E3

SIHFP360-E3

更新时间： 2024-10-17 06:11:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	963K
描述
Power MOSFET

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SIHFP360-E3 数据手册

IRFP360, SiHFP360

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rated

PRODUCT SUMMARY

V_DS(V)

400

Available

• Repetitive Avalanche Rated

• Isolated Central Mounting Hole

• Fast Switching

_DS(on)(Ω)

V_GS= 10 V

0.20

RoHS*

Q_g(Max.) (nC)

210

COMPLIANT

_gs(nC)

_gd(nC)

• Ease of Paralleling

110

Configuration

Single

• Simple Drive Requirements

• Lead (Pb)-free Available

TO-247

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-247 package is preferred for commercial-industrial

applications where higher power levels preclude the use of

TO-220 devices. The TO-247 is similar but superior to the

earlier TO-218 package because of its isolated mounting

hole. It also provides greater creepage distance between

pins to meet the requirements of most safety specifications.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-247

IRFP360PbF

SiHFP360-E3

IRFP360

Lead (Pb)-free

SnPb

SiHFP360

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

400

V_GS

T_C= 25 °C

T_C=100°C

Continuous Drain Current

_GSat 10 V

I_D

Pulsed Drain Current^a

I_DM

Linear Derating Factor

2.2

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

1200

E_AR

Maximum Power Dissipation

_C= 25 °C

P_D

280

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

4.0

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

6-32 or M3 screw

lbf · in

N · m

Mounting Torque

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 4.0 mH, R_G= 25 Ω, I_AS= 23 A (see fig. 12).

c. I_SD≤ 23 A, dI/dt ≤ 170 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 90292

S-81377-Rev. A, 30-Jun-08

www.vishay.com

12 3 4 5 6 7 8

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