Datasheet > SIHFIB7N50L

SIHFIB7N50L

更新时间： 2024-10-16 06:11:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	194K
描述
Power MOSFET

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数据手册

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SIHFIB7N50L 数据手册

IRFIB7N50L, SiHFIB7N50L

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Super Fast Body Diode Eliminates the Need for

External Diodes in ZVS Applications

500

_DS(on)(Ω)

V_GS= 10 V

0.320

RoHS

• Lower Gate Charge Results in Simpler Drive

Reqirements

COMPLIANT

Q_g(Max.) (nC)

_gs(nC)

_gd(nC)

• Enhanced dV/dt Capabilities Offer Improved

Ruggedness

Configuration

Single

• Higher Gate Voltage Threshold Offers Improved Noise

Immunity

TO-220 FULLPAK

• Lead (Pb)-free

APPLICATIONS

• Zero Voltage Switching SMPS

• Telecom and Server Power Supplies

• Uninterruptible Power Supplies

• Motor Control Applications

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220 FULLPAK

IRFIB7N50LPbF

SiHFIB7N50L-E3

Lead (Pb)-free

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

500

V_GS

T_C= 25 °C

T_C=100°C

6.8

Continuous Drain Current

V_GSat 10 V

I_D

4.3

Pulsed Drain Current^a

I_DM

0.37

550

Linear Derating Factor

W/°C

Single Pulse Avalanche Energy^b

Avalanche Current^a

E_AS

I_AR

6.8

Repetitive Avalanche Energy^a

E_AR

4.6

Maximum Power Dissipation

T_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

lbf · in

N · m

Mounting Torque

6-32 or M3 screw

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12).

b. Starting T_J= 25 °C, L = 24 mH, R_G= 25 Ω, I_AS= 6.8 A (see fig. 14).

c. I_SD≤ 6.8 A, dI/dt ≤ 650 A/µs, V_DD≤ V_DS, dV/dt = 24 V/ns, T_J≤ 150 °C.

d. 1.6 mm from case.

Document Number: 91177

S-Pending-Rev. A, 24-Jun-08

www.vishay.com

WORK-IN-PROGRESS

12 3 4 5 6 7...9

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