SIHFIBC40GLC

更新时间： 2024-12-01 13:01:39

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管功率场效应晶体管开关脉冲局域网
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8页	1458K
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数据手册

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SIHFIBC40GLC 数据手册

IRFIBC40G, SiHFIBC40G

Vishay Siliconix

Power MOSFET

FEATURES

• Isolated Package

• Low Thermal Resistance

• Sink to Lead Creepage Dist. = 4.8 mm

• High Voltage Isolation = 2.5 kV_RMS(t = 60 s,

f = 60 Hz)

PRODUCT SUMMARY

V_DS(V)

600

Available

_DS(on)(Ω)

V_GS= 10 V

1.2

RoHS*

Q_g(Max.) (nC)

8.3

COMPLIANT

_gs(nC)

_gd(nC)

• Dynamic dV/dt Rating

• Lead (Pb)-free Available

Configuration

Single

TO-220 FULLPAK

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional

insulating hardware in commercial-industrial applications.

The molding compound used provides a high isolation

capability and a low thermal resistance between the tab and

external heatsink. This isolation is equivalent to using a 100

micron mica barrier with standard TO-220 product. The

FULLPAK is mounted to a heatsink using a single clip or by

a single screw fixing.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220 FULLPAK

IRFIBC40GPbF

SiHFIBC40G-E3

IRFIBC40G

Lead (Pb)-free

SnPb

SiHFIBC40G

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

SYMBOL

LIMIT

600

UNIT

V_DS

V_GS

_C= 25 °C

3.5

Continuous Drain Current

_GSat 10 V

I_D

T_C=100°C

2.2

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.32

500

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

3.5

E_AR

4.0

Maximum Power Dissipation

T_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

3.0

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

lbf · in

N · m

Mounting Torque

6-32 or M3 screw

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 74 mH, R_G= 25 Ω, I_AS= 3.5 A (see fig. 12).

c. I_SD≤ 6.2 A, dI/dt ≤ 80 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91182

S-81273-Rev. A, 16-Jun-08

www.vishay.com

12 3 4 5 6 7 8

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