Datasheet > SIHFIBC20G

SIHFIBC20G

更新时间： 2024-12-01 12:05:15

品牌	Logo	应用领域
科盛美 - KERSEMI		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
7页	3995K
描述
Power MOSFET

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SIHFIBC20G 数据手册

IRFIBC20G, SiHFIBC20G

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Isolated Package

600

Available

• High Voltage Isolation = 2.5 kV_RMS(t = 60 s;

f = 60 Hz)

R_DS(on)(Ω)

V_GS= 10 V

4.4

RoHS*

Q_g(Max.) (nC)

3.0

COMPLIANT

• Sink to Lead Creepage Distance = 4.8 mm

• Dynamic dV/dt Rating

_gs(nC)

_gd(nC)

8.9

• Low Thermal Resistance

Configuration

Single

• Lead (Pb)-free Available

TO-220 FULLPAK

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional

insulating hardware in commercial-industrial applications.

The molding compound used provides a high isolation

capability and a low thermal resistance between the tab and

external heatsink. The isolation is equivalent to using a 100

micron mica barrier with standard TO-220 product. The

FULLPAK is mounted to a heatsink using a single clip or by

a single screw fixing.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220 FULLPAK

IRFIBC20GPbF

SiHFIBC20G-E3

IRFIBC20G

Lead (Pb)-free

SnPb

SiHFIBC20G

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

600

V_GS

T_C= 25 °C

T_C=100°C

1.7

Continuous Drain Current

_GSat 10 V

I_D

1.1

Pulsed Drain Current^a

I_DM

6.8

Linear Derating Factor

0.24

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

1.7

E_AR

3.0

Maximum Power Dissipation

Peak Diode Recovery dV/dt^c

_C= 25 °C

P_D

3.0

dV/dt

T_J, T_stg

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

6-32 or M3 screw

lbf · in

N · m

Mounting Torque

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 53 mH, R_G= 25 Ω, I_AS= 1.7 A (see fig. 12).

c. I_SD≤ 2.2 A, dI/dt ≤ 40 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

www.kersemi.com

12 3 4 5 6 7

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