SIHFI840GLC

更新时间： 2024-10-16 06:11:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	1666K
描述
Power MOSFET

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SIHFI840GLC 数据手册

IRFI840GLC, SiHFI840GLC

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

• Ultra Low Gate Charge

V_DS(V)

500

• Reduced Gate Drive Requirement

• Enhanced 30 V V_GSRating

• Isolated Package

Available

_DS(on)(Ω)

V_GS= 10 V

0.85

RoHS*

Q_g(Max.) (nC)

COMPLIANT

_gs(nC)

_gd(nC)

• High Voltage Isolation = 2.5 kV_RMS(t = 60 s; f = 60 Hz)

• Sink to Lead Creepage Distance = 4.8 mm

• Repetitve Avalanche Rated

Configuration

Single

• Lead (Pb)-free Available

TO-220 FULLPAK

DESCRIPTION

This new series of low charge Power MOSFETs achieve

significantly lower gate charge over conventional MOSFETs.

Utilizing advanced Power MOSFET technology, the device

improvements allow for reduced gate drive requirements,

faster switching speeds and increased total system savings.

These device improvements combined with the proven

ruggedness and reliability that are characteristic of

MOSFETs offer the designer a new standard in power

transistors for switching applications.

N-Channel MOSFET

The TO-220 FULLPAK eliminates the need for additional

insulating hardware. The molding compound used provides

a high isolation capability and low thermal resistance

between the tab and external heatsink.

ORDERING INFORMATION

Package

TO-220 FULLPAK

IRFI840GLCPbF

SiHFI840GLC-E3

IRFI840GLC

Lead (Pb)-free

SnPb

SiHFI840GLC

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

SYMBOL

LIMIT

500

UNIT

V_DS

V_GS

_C= 25 °C

4.5

2.9

Continuous Drain Current

_GSat 10 V

I_D

T_C=100°C

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.32

300

4.5

4.0

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

E_AR

P_D

dV/dt

T_J, T_stg

Maximum Power Dissipation

Peak Diode Recovery dV/dt^c

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_C= 25 °C

3.5

V/ns

- 55 to + 150

300^d

°C

for 10 s

lbf · in

N · m

Mounting Torque

6-32 or M3 screw

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 26 mH, R_G= 25 Ω, I_AS= 4.5 A (see fig. 12).

c. I_SD≤ 8.0 A, dI/dt ≤ 100 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91160

S-81292-Rev. A, 16-Jun-08

www.vishay.com

12 3 4 5 6 7 8

中文翻译

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