Datasheet > SIHA105N60EF-GE3

SIHA105N60EF-GE3

更新时间： 2024-11-25 20:04:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	133K
描述
Power Field-Effect Transistor,

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SIHA105N60EF-GE3 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.48
Base Number Matches：	1

SIHA105N60EF-GE3 数据手册

SiHA105N60EF

www.vishay.com

Vishay Siliconix

EF Series Power MOSFET With Fast Body Diode

FEATURES

• 4^thgeneration E series technology

Thin-Lead TO-220 FULLPAK

• Low figure-of-merit (FOM) R_onx Q_g

• Low effective capacitance (C_o(er)

)

• Reduced switching and conduction losses

• Avalanche energy rated (UIS)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

APPLICATIONS

• Server and telecom power supplies

• Switch mode power supplies (SMPS)

• Power factor correction power supplies (PFC)

• Lighting

- High-intensity discharge (HID)

- Fluorescent ballast lighting

• Industrial

PRODUCT SUMMARY

V_DS(V) at T_Jmax.

650

R_DS(on)typ. () at 25 °C

V_GS= 10 V

0.088

Q_gmax. (nC)

_gs(nC)

_gd(nC)

- Welding

- Induction heating

Configuration

Single

- Motor drives

- Battery chargers

- Solar (PV inverters)

ORDERING INFORMATION

Package

Thin-Lead TO-220 FULLPAK

SiHA105N60EF-GE3

Lead (Pb)-free and halogen-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

600

V_GS

_C= 25 °C

Continuous drain current (T_J= 150 °C) ^e

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed drain current ^a

I_DM

Linear derating factor

0.28

226

W/°C

Single pulse avalanche energy ^b

Maximum power dissipation

Operating junction and storage temperature range

Drain-source voltage slope

Reverse diode dv/dt ^d

Soldering recommendations (peak temperature) ^c

E_AS

P_D

T_J, T_stg

-55 to +150

°C

T_J= 125 °C

For 10 s

dv/dt

V/ns

260

°C

Mounting torque, M3 screw

0.6

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature

b. V_DD= 120 V, starting T_J= 25 °C, L = 28.2 mH, R_g= 25 , I_AS= 4 A

c. 1.6 mm from case

d. I_SD I_D, di/dt = 400 A/μs, starting T_J= 25 °C

e. Limited by maximum junction temperature

S19-1042-Rev. A, 09-Dec-2019

Document Number: 92299

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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