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SiHA12N50E PDF预览

SiHA12N50E

更新时间: 2024-09-16 14:56:03
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 163K
描述
E Series Power MOSFET

SiHA12N50E 数据手册

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SiHA12N50E  
Vishay Siliconix  
www.vishay.com  
E Series Power MOSFET  
FEATURES  
• Low figure-of-merit (FOM) Ron x Qg  
D
Thin-Lead TO-220 FULLPAK  
• Low input capacitance (Ciss  
)
• Reduced switching and conduction losses  
• Low gate charge (Qg)  
G
Available  
• Avalanche energy rated (UIS)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
S
S
D
G
APPLICATIONS  
N-Channel MOSFET  
• Computing  
- PC silver box / ATX power supplies  
• Lighting  
PRODUCT SUMMARY  
VDS (V) at TJ max.  
550  
- Two stage LED lighting  
RDS(on) max. () at 25 °C  
VGS = 10 V  
0.380  
• Consumer electronics  
Qg max. (nC)  
50  
6
• Applications using hard switched topologies  
- Power factor correction (PFC)  
- Two switch forward converter  
- Flyback converter  
Q
gs (nC)  
gd (nC)  
Q
10  
Configuration  
Single  
• Switch mode power supplies (SMPS)  
ORDERING INFORMATION  
Package  
Thin-Lead TO-220 FULLPAK  
SiHA12N50E-E3  
Lead (Pb)-free  
Lead (Pb)-free and halogen-free  
SiHA12N50E-GE3  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
500  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
V
VGS  
30  
T
C = 25 °C  
10.5  
6.6  
Continuous drain current (TJ = 150 °C) e  
VGS at 10 V  
ID  
TC = 100 °C  
A
Pulsed drain current a  
IDM  
21  
Linear derating factor  
0.91  
103  
W/°C  
mJ  
W
Single pulse avalanche energy b  
Maximum power dissipation  
Operating junction and storage temperature range  
Drain-source voltage slope  
EAS  
PD  
32  
TJ, Tstg  
-55 to +150  
70  
°C  
V
DS = 0 V to 80 % VDS  
dV/dt  
V/ns  
Reverse diode dV/dt d  
27  
Soldering recommendations (peak temperature) c  
for 10 s  
300  
°C  
Mounting torque  
M3 screw  
0.6  
Nm  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature  
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 2.7 A  
c. 1.6 mm from case  
d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C  
e. Limited by maximum junction temperature  
S17-1307-Rev. D, 21-Aug-17  
Document Number: 91637  
1
For technical questions, contact: hvm@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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