Datasheet > SIE862DF

SIE862DF

更新时间： 2024-11-13 09:25:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	209K
描述
N-Channel 30-V (D-S) MOSFET

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SIE862DF 数据手册

New Product

SiE862DF

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

I_D(A)^a

Definition

•

TrenchFET^®Gen III Power MOSFET

Ultra Low Thermal Resistance Using

Top-Exposed PolarPAK^®Package for

Double-Sided Cooling

Silicon Package

V_DS(V)

R_DS(on)(Ω)^e

Q_g(Typ.)

Limit

0.0032 at V_GS= 10 V

0.0041 at V_GS= 4.5 V

134

23 nC

119

•

Leadframe-Based New Encapsulated Package

- Die Not Exposed

Package Drawing

www.vishay.com/doc?68797

- Same Layout Regardless of Die Size ≤ 100 V

Low Q_gd/Q_gsRatio Helps Prevent Shoot-Through

100 % R_gand UIS Tested

•

PolarPAK

Compliant to RoHS directive 2002/95/EC

APPLICATIONS

•

VRM

DC/DC Conversion

Synchronous Rectification

POL

Top View

Bottom View

N-Channel MOSFET

Top surface is connected to pins 1, 5, 6, and 10

For Related Documents

www.vishay.com/ppg?65026

Ordering Information: SiE862DF-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

134 (Silicon Limit)

50^a(Package Limit)

T_C= 25 °C

50^a

30^{b, c}

24^{b, c}

100

50^a

4.3^{b, c}

104

Continuous Drain Current (T_J= 150 °C)

I_D

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Pulsed Drain Current

I_DM

I_S

_C= 25 °C

Continuous Source-Drain Diode Current

T_A= 25 °C

L = 0.1 mH

T_C= 25 °C

Single Pulse Avalanche Current

Avalanche Energy

I_AS

E_AS

_C= 70 °C

P_D

Maximum Power Dissipation

5.2^{b, c}

3.3^{b, c}

T_A= 25 °C

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

- 55 to 150

260

°C

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See Solder Profile (www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not

plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

Document Number: 65026

S09-1395-Rev. A, 20-Jul-09

www.vishay.com

12 3 4 5 6 7...10

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与SIE862DF相关器件

型号	品牌	获取价格	描述	数据表
SIE862DF-T1-GE3	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SIE864DF-T1-GE3	VISHAY	获取价格	TRANSISTOR 23 A, 30 V, 0.0073 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COM
SIE868DF	VISHAY	获取价格	N-Channel 40-V (D-S) MOSFET
SIE868DF-T1-GE3	VISHAY	获取价格	N-Channel 40-V (D-S) MOSFET
SIE874DF-T1-GE3	VISHAY	获取价格	N-Channel 20-V (D-S) MOSFET
SIE876DF	VISHAY	获取价格	N-Channel 60-V (D-S) MOSFET
SIE876DF-T1-GE3	VISHAY	获取价格	N-Channel 60-V (D-S) MOSFET
SIE878DF	VISHAY	获取价格	N-Channel 25-V (D-S) MOSFET
SIE878DF-T1-GE3	VISHAY	获取价格	N-Channel 25-V (D-S) MOSFET
SIE882DF	VISHAY	获取价格	N-Channel 25-V (D-S) MOSFET

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