SICW028N120A4
Curve Characteristics
Fig. 7 - Normalized On-Resistance vs Temperature
Fig. 8 - Body Diode Characteristic
0
-10
-20
-30
-40
-50
-60
2.4
2.0
1.6
1.2
0.8
0.4
0.0
VGS=18V
ID=40A
Tj=25°C
VGS=-5V, -3V
VGS=0V
25
50
75
100
125
150
175
-6
-5
-4
-3
-2
-1
0
Source Drain Voltage (V)
Junction Temperature (°C)
Fig. 10 - Output capacitor stored energy
Fig. 9 - Body Diode Characteristic
120
100
80
60
40
20
0
0
-10
-20
-30
-40
-50
-60
Tj=175°C
VGS=-5V, -3V
VGS=0V
0
200
400
600
800
1000
-6
-5
-4
-3
-2
-1
0
Drain to Source Voltage (V)
Drain Source Voltage (V)
Fig. 12 - Typical Gate Charge
Fig. 11 - Threshold Voltage vs Temperature
18
15
12
9
3.0
VDS=800V
ID=40A
VGS=VDS
ID=15mA
2.5
2.0
1.5
1.0
0.5
0.0
VGS=-3/+18V
Tj=25°C
6
3
0
-3
25
50
75
100
125
150
175
0
30
60
90
120
150
180
Gate Charge(nC)
Junction Temperature (°C)
Rev.4-1-09152023
4/6
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