Datasheet > SID01L60

SID01L60

更新时间： 2024-09-27 07:03:51

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	706K
描述
N-Channel Enhancement Mode Power Mos.FET

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SID01L60 数据手册

SID01L60

1A, 600V,RDS(ON)12Ω

Elektronische Bauelemente

N-Channel Enhancement Mode PowerMos.FET

Description

TO-251

2.3±

0.1

6.6±

0.2

The SID01L60 (through-hole version) is universally preferred for all

commercial-industrial surface mount applications and

suited for AC/DC converters.

5.3±

0.2

0.5±

0.2

0.05

7.0±

5.6±

7.0±

0.2

Features

1.2±

0.3

0.75±

0.15

* RoHs Compliant

0.2

* Simple Drive Requirement

* Fast Switching Speed

* Repetitive Avalanche Rated

0.6±

0.1

0.5±

0.1

2.3REF.

Dimensions in millimeters

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

VDS

Ratings

Unit

600

±30

Gate-Source Voltage

VG S

ID@TC=25^oC

Continuous Drain Current,VGS@10V

0.8

Continuous Drain Current,VGS@10V

ID@TC=100

Pulsed Drain Current¹

Total Power Dissipation

IDM

^oC

PD@TC=25

W/^oC

0.232

Linear Derating Factor

Single Pulse Avalanche Energy²

Avalanche Current

0.5

EAS

IAR

^oC

Repetitive Avalanche Energy

0.5

EAR

Operating Junction and Storage Temperature Range

-55~+150

Tj, Tstg

Thermal Data

Parameter

Symbol

Rthj-c

Ratings

Unit

4.3

C /W

Max.

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

^oC /W

110

Rthj-a

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 4

12 3 4

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