Datasheet > SICW028N120A4

SICW028N120A4

更新时间： 2024-04-09 19:00:41

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
6页	1992K
描述
Bulk: 360pcs/Box;

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SICW028N120A4 数据手册

SICW028N120A4

Electrical Characteristics @ T_j=25°C (Unless Otherwise Specified)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static Characteristics

V_(BR)DSSV_GS=0V, I_D=250uA

Drain-Source Breakdown Voltage

Gate-Source Leakage Current

Zero Gate Voltage Drain Current

Gate-Threshold Voltage^(Note5)

1200

µA

I_GSS

I_DSS

V_DS=0V, V_GS=-5/+22V

V_DS=1200V, V_GS=0V

V_DS=V_GS, I_D=15mA

V_GS=20V, I_D=40A

±250

100

3.0

V_GS(th)

1.5

2.0

mΩ

Drain-Source On-Resistance^(Note5)

Internal Gate Resistance

V_GS=18V, I_D=40A

R_DS(on)

V_GS=16V, I_D=40A

mΩ

R_g

1.5

f=1MHz, V_AC=25mV

Diode Characteristics

Continuous Body Diode Current^(Note6)

I_S

V_GS=-3V

Diode Forward Voltage^(Note5)

Reverse Recovery Time

Reverse Recovery Charge

4.5

V_SD

t_rr

V_GS=-3V, I_SD=40A

V_GS=-3/+18V, I_SD=40A,

V_R=800V, dI_F/dt=400A/μs

Q_rr

240

6.2

Peak Reverse Recovery Current

Dynamic Characteristics

Input Capacitance

I_rrm

C_iss

C_oss

C_rss

E_oss

Q_g

3570

170

Output Capacitance

Reverse Transfer Capacitance

Coss Stored Energy

Total Gate Charge

V_DS=1000V,V_GS=0V,f=1MHz

V_AC=25mV

µJ

168

Q_gs

Q_gd

Gate-Source Charge

Gate-Drain Charge

V_DS=800V,V_GS=-3/+18V

I_D=40A

Gate Plateau Voltage

V_pl

t_d(on)

t_r

7.1

Turn-On Delay Time

Turn-On Rise Time

V_DD=800V, V_GS=-3/+18V,

R_G(ext)=2.5Ω, I_DS=40A,

L=200µH

t_d(off)

t_f

Turn-Off Delay Time

Turn-Off Fall Time

42.5

E_on

Turn-On switching energy

Turn-Off switching energy

223

257

µJ

E_off

Notes:

5. Pulse test, pulse width≤380µs.

6. Limited by maximum power dissipation allowed.

Rev.4-1-09152023

2/6

MCCSEMI.COM

123 4 5 6

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