Datasheet > SICW080N120Y4

SICW080N120Y4

更新时间： 2024-11-06 14:56:03

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
7页	3090K
描述
Bulk: 360pcs/Box;

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数据手册

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SICW080N120Y4 数据手册

SICW080N120Y4

Features

•

SiC MOSFET technology

High blocking voltage with low on-resistance

High-speed switching with low capacitances

Halogen Free. “Green” Device (Note 1)

Epoxy Meets UL 94 V-0 Flammability Rating

N-CHANNEL

MOSFET

Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS

Compliant. See Ordering Information)

Maximum Ratings

•

Operating Junction Temperature Range : -55°C to +175°C

Storage Temperature Range: -55°C to +175°C

Thermal Resistance: 0.67°C/W Junction to Case

TO-247-4

Applications

•

Solar Inverters

Switch Mode Power Supplies

High Voltage DC/DC Converters

Battery Chargers

Motor Drives

Parameter

Rating

1200

-8/+22

-4/+18

Symbol

V_DS

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GSmax

V_GSop

I_D

Gate-Source Voltage

Continuous Drain Current

DIMENSIONS

INCHES

MIN MAX

MAX

Pulsed Drain Current ⁽¹⁾

DIM

NOTE

I_DM

MIN

Total Power Dissipation,Tc=25^oC

P_D

0.190 0.205 4.80

0.090 0.100 2.29

0.075 0.082 1.88

0.042 0.052 1.10

0.093 0.108 2.35

0.094 0.112 2.39

0.022 0.027 0.55

5.20

2.50

2.08

1.30

2.75

2.84

0.68

223

Total Power Dissipation,Tc=110^oC

P_D

Note:

1. Pulse Test: Pulse Width≤10µs,Duty Cycle ≤1%.

0.917 0.929 23.30 23.60

0.640 0.663 16.25 16.85

0.620 0.632 15.75 16.05

0.543 0.559 13.80 14.20

Internal Structure

Drain (Pin 1)

0.173 0.201

4.4

5.10

0.100

2.54

MCC

SICW

080N120Y4

0.683 0.695 17.34 17.64

0.157 0.169 4.0

0.138 0.144 3.51

0.220 0.236 5.60

0.238 0.248 6.04

4.3

YYWW

3.65

6.00

6.30

Gate

(Pin 4)

Driver Source

(Pin 3)

Power Source

(Pin 2)

Rev.3-1-10092022

1/7

MCCSEMI.COM

12 3 4 5 6 7

中文翻译

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