Datasheet > SICW1000N170A

SICW1000N170A

更新时间： 2023-12-06 20:03:09

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
6页	909K
描述
Bulk: 360pcs/Box;

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SICW1000N170A 数据手册

SICW1000N170A

Features

•

SiC MOSFET technology

High blocking voltage with low on-resistance

High-speed switching with low capacitances

Halogen Free. “Green” Device (Note 1)

Epoxy Meets UL 94 V-0 Flammability Rating

N-CHANNEL

MOSFET

Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS

Compliant. See Ordering Information)

Maximum Ratings

•

Operating Junction Temperature Range : -55°C to +150°C

Storage Temperature Range: -55°C to +150°C

Thermal Resistance: 1.7°C/W Junction to Case

TO-247AB

Applications

•

Solar Inverters

Switch Mode Power Supplies

High Voltage DC/DC Converters

Battery Chargers

Motor Drives

Parameter

Rating

1700

-5/+25

-3/+20

Symbol

V_DS

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GSmax

V_GSop

I_D

Gate-Source Voltage

DIMENSIONS

INCHES MM

MIN MAX MAX

0.189 0.205 4.80

0.087 0.103 2.21

0.073 0.085 1.85

0.039 0.055 1.00

0.075 0.087 1.91

0.020 0.028 0.50

Continuous Drain Current

DIM

NOTE

Pulsed Drain Current ⁽¹⁾

Total Power Dissipation

MIN

I_DM

5.20

2.61

2.15

1.40

2.21

0.70

P_D

Note:

1. Pulse Test: Pulse Width≤10µs,Duty Cycle ≤1%.

0.815 0.839 20.70 21.30

0.640 0.663 16.25 16.85

0.610 0.634 15.50 16.10

0.512 0.535 13.00 13.60

Internal Structure

0.189 0.205 4.80

0.091 0.106 2.30

5.20

2.70

0.772 0.796 19.62 20.22

MCC

SICW

1000N170A

2235

0.169

0.134 0.150 3.40

0.287

0.242

0.214

0.110 0.126 2.80

4.30

3.80

7.30

1. Gate

2. Drain

6.15

5.44

3.20

TYP

3. Source

Rev.3-1-10082022

1/6

MCCSEMI.COM

12 3 4 5 6

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