Datasheet > SiC770CD-T1-GE3

SiC770CD-T1-GE3

更新时间： 2024-11-02 01:11:55

品牌	Logo	应用领域
威世 - VISHAY		服务器主板节能技术
页数	文件大小	规格书
13页	450K
描述
DrMOS Integrated Power Stage

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

SiC770CD-T1-GE3 数据手册

SiC770CD

Vishay Siliconix

www.vishay.com

DrMOS Integrated Power Stage

DESCRIPTION

FEATURES

The SiC770 is an integrated power stage solution optimized

for synchronous buck applications to offer high current, high

efficiency and high power density performance. Packaged

in Vishay’s proprietary 6 mm x 6 mm MLP package, SiC770

enables voltage regulator design to deliver in excess of 40 A

per phase current.

• Industry benchmark MOSFET with integrated

Schottky diode

• Delivers in excess of 40 A continuous current

• 91 % peak efficiency

• High frequency operation up to 1 MHz

• Power MOSFETs optimized for 19 V input stage

• 5 V PWM logic with tri-state and hold-off

The internal power MOSFETs utilizes Vishay’s

state-of-the-art TrenchFET Gen IV technology that delivers

industry bench-mark performance to significantly reduce

switching and conduction losses.

• Automatic skip mode operation (ZCD) for light load

efficiency

The SiC770 incorporates an advanced MOSFET gate driver

IC that features high current driving capability, adaptive

dead-time control, and integrated bootstrap Schottky

diode, a thermal warning (THWn) alerts the system of

excessive junction temperature. This driver is also

compatible with wide range of PWM controllers with the

support of tri-state PWM, 5 V PWM logic, and skip mode

(ZCD) for improve light load efficiency.

• Built-in bootstrap Schottky diode

• Thermal monitor flag

• V_CINunder voltage lockout

• Compliant with Intel DrMOS 4.0 specification

• Thermally enhanced PowerPAK^®MLP6x6-40L package

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Synchronous buck converters

• Muliti-phase VRDs for CPU, GPU and memory

• DC/DC POL modules

TYPICAL APPLICATION DIAGRAM

VIN

BOOT

PHASE

VCIN

ZCD_EN#

VOUT

DSBL

Gate

PWM

Controller

Driver

PWM

THWn

Fig. 1 - SiC770 Typical Application Diagram

S13-1119-Rev. A, 27-May-13

Document Number: 62727

For technical questions, contact: powerictechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...13

中文翻译

下载PDF

SiC770CD-T1-GE3 替代型号

型号	品牌	替代类型	描述	数据表
SIC762CD-T1-GE3	VISHAY	功能相似	Integrated DrMOS Power Stage

与SiC770CD-T1-GE3相关器件

型号	品牌	获取价格	描述	数据表
SiC770DB	VISHAY	获取价格	DrMOS Integrated Power Stage
SIC772CD	VISHAY	获取价格	DrMOS Integrated Power Stage
SiC772CD-T1-GE3	VISHAY	获取价格	DrMOS Integrated Power Stage
SiC772DB	VISHAY	获取价格	DrMOS Integrated Power Stage
SIC778A	VISHAY	获取价格	High Performance DrMOS â Integrated Power S
SIC778ACD-T1-GE3	VISHAY	获取价格	High Performance DrMOS â Integrated Power S
SIC778DB	VISHAY	获取价格	High Performance DrMOS â Integrated Power S
SIC779	VISHAY	获取价格	Integrated DrMOS Power Stage
SIC779_12	VISHAY	获取价格	Integrated DrMOS Power Stage
SIC779CD-T1-GE3	VISHAY	获取价格	Integrated DrMOS Power Stage

与SiC770CD-T1-GE3相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

4
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

2
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

23
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

24

产品中心

服务支持

精选活动

关于我们

帮助中心

SiC770CD-T1-GE3

SiC770CD-T1-GE3 数据手册

SiC770CD-T1-GE3 替代型号

与SiC770CD-T1-GE3相关器件

与SiC770CD-T1-GE3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SiC770CD-T1-GE3

SiC770CD-T1-GE3 数据手册

SiC770CD-T1-GE3 替代型号

与SiC770CD-T1-GE3相关器件

与SiC770CD-T1-GE3相关文章

您还可以找

您在本页遇到什么问题？