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SiC820 PDF预览

SiC820

更新时间: 2024-11-02 14:54:31
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 151K
描述
80 A VRPower?, Smart Power Stage With Current Sensing and Temperature Monitor (Datasheet in Brief)

SiC820 数据手册

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SiC820, SiC820A  
www.vishay.com  
Vishay Siliconix  
80 A VRPower®, Smart Power Stage With Current Sensing and  
Temperature Monitor  
(Datasheet in Brief)  
FEATURES  
• Thermally enhanced PowerPAK® MLP39-65 package  
• Optimize MOSFET switching performance with integrated  
Schottky diode in LS MOSFET  
• Up to 80 A continuous current  
• High frequency operation up to 2 MHz  
• Power MOSFETs optimized for 12 V input stage and  
10 % to 15 % duty cycle operation  
• 3.3 V / 5 V PWM logic with tri-state and hold-off  
• PWM minimum controllable on time of 30 ns  
DESCRIPTION  
• Diode emulation mode at light loads for high efficiency  
The SiC820 is an integrated power stage solution optimized  
over the full load range using GLCTRL pin  
for synchronous buck applications to offer high current, high  
• Low PWM propagation delay (< 20 ns)  
efficiency, and high power density performance. Packaged  
• Current sense monitor (IMON  
)
in Vishay's 5 mm x 6 mm MLP package, SiC820 enables  
voltage regulator design to deliver in excess of 80 A per  
phase current.  
• Temperature monitor (TMON  
• Over temperature alert  
)
• HS MOSFET over-current and short alert  
• Under voltage lockout for VDRV  
The  
internal  
power  
MOSFETs  
utilize  
Vishay's  
state-of-the-art TrenchFET® Gen IV technology that delivers  
industry bench mark performance to significantly reduce  
switching and conduction losses.  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
The SiC820 incorporates an advanced MOSFET gate driver  
IC that features high current driving capability, adaptive  
dead-time control, and integrated bootstrap switch, a  
thermal monitor that alerts the system of excessive junction  
temperature. This driver is also compatible with wide range  
of PWM controllers with the support of both 3.3 V and 5 V  
PWM logic with tri-state. Diode emulation mode can be  
enabled at light loads through the use of GLCTRL signal.  
The device also integrates a current monitor to provide a real  
time scale down of inductor current (IMON). A temperature  
monitor provides the system an indication of the power  
stage internal temperature (TMON) and can be used to  
throttle the system operation down to a safer level if needed.  
The device also integrates fault alerts such as HS FET  
overcurrent, over temperature and HS MOSFET short  
failures.  
APPLICATIONS  
• Synchronous buck converters  
• Multi-phase VRDs for CPU, GPU, and memory  
• DC/DC VR modules  
EFFICIENCY  
Axis Title  
96  
94  
92  
90  
88  
86  
84  
82  
80  
10000  
1000  
100  
VO = 1.8 V, FSW = 600 kHz  
VO = 1.8 V, FSW = 800 kHz  
VO = 1.2 V, FSW = 800 kHz  
VO = 1.2 V, FSW = 600 kHz  
10  
0
10  
20  
30  
40  
IOUT - Output Current (A)  
Fig. 1 - Efficiency vs. Output Current  
(VIN = 12 V, L = 100 nH, VCC = VDRV = 5 V)  
S21-0583-Rev. E, 14-Jun-2021  
Document Number: 77084  
1
For technical questions, contact: powerictechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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