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SIC762CD-T1-GE3

更新时间： 2024-11-01 09:25:39
品牌 Logo 应用领域
威世 - VISHAY 驱动器MOSFET驱动器驱动程序和接口接口集成电路服务器主板节能技术
页数 文件大小 规格书
18页 542K
描述
Integrated DrMOS Power Stage

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SIC762CD-T1-GE3 技术参数

生命周期：Transferred零件包装代码：DFN
包装说明：HVQCCN,针数：40
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.67
Is Samacsys：N高边驱动器：YES
接口集成电路类型：HALF BRIDGE BASED MOSFET DRIVERJESD-30 代码：S-XQCC-N40
长度：6 mm功能数量：1
端子数量：40最高工作温度：125 °C
最低工作温度：-40 °C封装主体材料：UNSPECIFIED
封装代码：HVQCCN封装形状：SQUARE
封装形式：CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE认证状态：Not Qualified
座面最大高度：0.8 mm最大供电电压：24 V
最小供电电压：3 V标称供电电压：12 V
电源电压1-最大：5.5 V电源电压1-分钟：4.5 V
电源电压1-Nom：5 V表面贴装：YES
温度等级：AUTOMOTIVE端子形式：NO LEAD
端子节距：0.5 mm端子位置：QUAD
宽度：6 mmBase Number Matches：1

SIC762CD-T1-GE3 数据手册

 浏览型号SIC762CD-T1-GE3的Datasheet PDF文件第2页浏览型号SIC762CD-T1-GE3的Datasheet PDF文件第3页浏览型号SIC762CD-T1-GE3的Datasheet PDF文件第4页浏览型号SIC762CD-T1-GE3的Datasheet PDF文件第5页浏览型号SIC762CD-T1-GE3的Datasheet PDF文件第6页浏览型号SIC762CD-T1-GE3的Datasheet PDF文件第7页 
SiC762CD  
Vishay Siliconix  
Integrated DrMOS Power Stage  
• FEATURES  
DESCRIPTION  
•
Integrated Gen III MOSFETs and DrMOS  
compliant gate driver IC  
The SiC762CD is an integrated solution that contains PWM  
optimized n-channel MOSFETs (high side and low side) and  
a full featured MOSFET driver IC. The device complies with  
the Intel DrMOS standard for desktop and server Vcore power  
stages. The SiC762CD delivers up to 35 A continuous output  
current and operates from an input voltage range of 3 V to  
27 V. The integrated MOSFETs are optimized for output  
voltages in the ranges of 0.8 V to 2.0 V with a nominal input  
voltage of 24 V. The device can also deliver very high power  
at 5 V output for ASIC applications.  
The SiC762CD incorporates an advanced MOSFET gate  
driver IC. This IC accepts a single PWM input from the VR  
controller and converts it into the high side and low side  
MOSFET gate drive signals. The driver IC is designed to  
implement the skip mode (SMOD) function for light load  
efficiency improvement. Adaptive dead time control also  
works to improve efficiency at all load points. The SiC762CD  
has a thermal warning (THDN) that alerts the system of  
excessive junction temperature. The driver IC includes an  
enable pin, UVLO and shoot through protection.  
•
•
Enables Vcore switching at 1 MHz  
Easily achieve > 90 % efficiency in multi-phase,  
low output voltage solutions  
Low ringing on the VSWH pin reduces EMI  
Pin compatible with DrMOS 6 x 6 version 3.0  
Tri-state PWM input function prevents negative output  
voltage swing  
5 V logic levels on PWM  
MOSFET threshold voltage optimized for 5 V driver bias  
supply  
•
•
•
•
•
•
Automatic skip mode operation (SMOD) for light load  
efficiency  
Under-voltage lockout  
•
•
•
•
•
Built-in bootstrap schottky diode  
Adaptive deadtime and shoot through protection  
Thermal shutdown warning flag  
Low profile, thermally enhanced PowerPAK® MLP 6 x 6  
40 pin package  
Halogen-free according to IEC 61249-2-21 definition  
Compliant to RoHS directive 2002/95/EC  
The SiC762CD is optimized for high frequency buck  
applications. Operating frequencies in excess of 1 MHz can  
easily be achieved.  
•
•
The SiC762CD is packaged in Vishay Siliconix high  
performance PowerPAK MLP6 x 6 package. Compact  
co-packaging of components helps to reduce stray  
inductance, and hence increases efficiency.  
APPLICATIONS  
•
CPU and GPU core voltage regulation  
Server, computer, workstation, game console, graphics  
boards, PC  
•
SIC762CD APPLICATION DIAGRAMM  
5 V  
V
IN  
V
CIN  
SMOD  
DSBL#  
PWM  
BOOT  
V
SWH  
V
O
PHASE  
THDN  
SiC762CD  
Figure 1  
Document Number: 65727  
S10-0275-Rev. A, 08-Feb-10  
www.vishay.com  
1
1234567...18

中文翻译

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SIC762CD-T1-GE3 替代型号

型号 品牌 替代类型 描述 数据表
SiC770CD-T1-GE3 VISHAY

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