是否Rohs认证: | 符合 | 生命周期: | Transferred |
零件包装代码: | DFN | 包装说明: | HVQCCN, |
针数: | 40 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8542.39.00.01 |
风险等级: | 5.61 | Is Samacsys: | N |
高边驱动器: | YES | 接口集成电路类型: | HALF BRIDGE BASED MOSFET DRIVER |
JESD-30 代码: | S-XQCC-N40 | 长度: | 6 mm |
功能数量: | 1 | 端子数量: | 40 |
最高工作温度: | 125 °C | 最低工作温度: | -40 °C |
封装主体材料: | UNSPECIFIED | 封装代码: | HVQCCN |
封装形状: | SQUARE | 封装形式: | CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE |
峰值回流温度(摄氏度): | 260 | 认证状态: | Not Qualified |
座面最大高度: | 0.8 mm | 最大供电电压: | 16 V |
最小供电电压: | 3 V | 标称供电电压: | 12 V |
表面贴装: | YES | 温度等级: | AUTOMOTIVE |
端子形式: | NO LEAD | 端子节距: | 0.5 mm |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | 40 |
断开时间: | 0.03 µs | 宽度: | 6 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SIC769DB | VISHAY |
获取价格 |
Integrated DrMOS Power Stage | |
SIC770CD | VISHAY |
获取价格 |
DrMOS Integrated Power Stage | |
SiC770CD-T1-GE3 | VISHAY |
获取价格 |
DrMOS Integrated Power Stage | |
SiC770DB | VISHAY |
获取价格 |
DrMOS Integrated Power Stage | |
SIC772CD | VISHAY |
获取价格 |
DrMOS Integrated Power Stage | |
SiC772CD-T1-GE3 | VISHAY |
获取价格 |
DrMOS Integrated Power Stage | |
SiC772DB | VISHAY |
获取价格 |
DrMOS Integrated Power Stage | |
SIC778A | VISHAY |
获取价格 |
High Performance DrMOS â Integrated Power S | |
SIC778ACD-T1-GE3 | VISHAY |
获取价格 |
High Performance DrMOS â Integrated Power S | |
SIC778DB | VISHAY |
获取价格 |
High Performance DrMOS â Integrated Power S |