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SIC779CD-T1-GE3

更新时间： 2024-11-18 09:25:39
品牌 Logo 应用领域
威世 - VISHAY 驱动器MOSFET驱动器驱动程序和接口接口集成电路服务器主板节能技术
页数 文件大小 规格书
17页 372K
描述
Integrated DrMOS Power Stage

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SIC779CD-T1-GE3 技术参数

生命周期：Active零件包装代码：DFN
包装说明：HVQCCN, LCC40,.24SQ,20针数：40
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：1.58
Is Samacsys：N高边驱动器：YES
接口集成电路类型：HALF BRIDGE BASED MOSFET DRIVERJESD-30 代码：S-XQCC-N40
长度：6 mm湿度敏感等级：3
功能数量：1端子数量：40
最高工作温度：125 °C最低工作温度：-40 °C
封装主体材料：UNSPECIFIED封装代码：HVQCCN
封装等效代码：LCC40,.24SQ,20封装形状：SQUARE
封装形式：CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE峰值回流温度（摄氏度）：260
电源：12 V认证状态：Not Qualified
座面最大高度：0.8 mm子类别：MOSFET Drivers
最大供电电压：16 V最小供电电压：3 V
标称供电电压：12 V电源电压1-最大：5.5 V
电源电压1-分钟：4.5 V电源电压1-Nom：5 V
表面贴装：YES温度等级：AUTOMOTIVE
端子面层：Pure Matte Tin (Sn)端子形式：NO LEAD
端子节距：0.5 mm端子位置：QUAD
处于峰值回流温度下的最长时间：30断开时间：0.03 µs
接通时间：0.03 µs宽度：6 mm
Base Number Matches：1

SIC779CD-T1-GE3 数据手册

 浏览型号SIC779CD-T1-GE3的Datasheet PDF文件第2页浏览型号SIC779CD-T1-GE3的Datasheet PDF文件第3页浏览型号SIC779CD-T1-GE3的Datasheet PDF文件第4页浏览型号SIC779CD-T1-GE3的Datasheet PDF文件第5页浏览型号SIC779CD-T1-GE3的Datasheet PDF文件第6页浏览型号SIC779CD-T1-GE3的Datasheet PDF文件第7页 
SiC779  
Vishay Siliconix  
Integrated DrMOS Power Stage  
FEATURES  
DESCRIPTION  
•
Industry benchmark Gen III MOSFETs with  
The SiC779 is an integrated solution that contains PWM  
optimized n-channel MOSFETs (high side and low side) and  
a full featured MOSFET driver IC. The device complies with  
the Intel DrMOS standard for desktop and server Vcore power  
stages. The SiC779 delivers up to 40 A continuous output  
current and operates from an input voltage range of 3 V to  
16 V. The integrated MOSFETs are optimized for output  
voltages in the ranges of 0.8 V to 2.0 V with a nominal input  
voltage of 12 V. The device can also deliver very high power  
at 5 V output for ASIC applications.  
integrated Schottky diode  
•
•
•
DrMOS compliant gate driver IC  
Enables Vcore switching at 1 MHz  
Easily achieve > 93 % efficiency in multi-phase,  
low output voltage solutions  
•
•
•
Low ringing on the VSWH pin reduces EMI  
Pin compatible with DrMOS 6 x 6 version 4.0  
Tri-state PWM input function prevents negative output  
voltage swing  
The SiC779 incorporates an advanced MOSFET gate driver  
IC. This IC accepts a single PWM input from the VR controller  
and converts it into the high side and low side MOSFET gate  
drive signals. The driver IC is designed to implement the skip  
mode (SMOD) function for light load efficiency improvement.  
Adaptive dead time control also works to improve efficiency  
at all load points. The SiC779 has a thermal warning (THDN)  
that alerts the system of excessive junction temperature. The  
driver IC includes an enable pin, UVLO and shoot through  
protection.  
The SiC779 is optimized for high frequency buck  
applications. Operating frequencies in excess of 1 MHz can  
easily be achieved.  
The SiC779 is packaged in Vishay Siliconix high  
performance PowerPAK MLP 6 x 6 package. Compact  
co-packaging of components helps to reduce stray  
inductance, and hence increases efficiency.  
•
•
5 V logic levels on PWM  
MOSFET threshold voltage optimized for 5 V driver bias  
supply  
Automatic skip mode operation (SMOD) for light load  
efficiency  
Under-voltage lockout  
•
•
•
•
•
•
Built-in bootstrap schottky diode  
Adaptive deadtime and shoot through protection  
Thermal shutdown warning flag  
Low profile, thermally enhanced PowerPAK® MLP 6 x 6  
40 pin package  
•
Halogen-free according to IEC 61249-2-21 definition  
• Compliant to RoHS Directive 2002/95/EC  
APPLICATIONS  
•
•
CPU and GPU core voltage regulation  
Server, computer, workstation, game console, graphics  
boards, PC  
SiC779 APPLICATION DIAGRAM  
5 V  
V
IN  
V
CIN  
SMOD  
DSBL#  
PWM  
BOOT  
V
SWH  
V
O
PHASE  
THDN  
SiC779CD  
Figure 1  
Document Number: 67538  
S11-0703-Rev. B, 18-Apr-11  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567...17

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