Datasheet > SiC840

SiC840

更新时间： 2024-11-02 14:55:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	151K
描述
100 A VRPower?, Smart Power Stage With Current Sensing and Temperature Monitor

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SiC840 数据手册

SiC840, SiC840A

www.vishay.com

Vishay Siliconix

100 A VRPower^®,

Smart Power Stage With Current Sensing and

Temperature Monitor

(Datasheet in Brief)

FEATURES

• Thermally enhanced PowerPAK^®MLP56-39L package

• Optimize MOSFET switching performance with integrated

Schottky diode in LS MOSFET

• Up to 100 A continuous current

• High frequency operation up to 2 MHz

• Power MOSFETs optimized for 12 V input stage and

10 % to 15 % duty cycle operation

• 3.3 V / 5 V PWM logic with tri-state and hold-off

• PWM minimum controllable on time of 30 ns

DESCRIPTION

• Diode emulation mode at light loads for high efficiency

over the full load range using GLCTRL pin

The SiC840 is an integrated power stage solution optimized

for synchronous buck applications to offer high current, high

efficiency, and high power density performance. Packaged

in Vishay's 5 mm x 6 mm MLP package, SiC840, enables

voltage regulator design to deliver in excess of 80 A per

phase current.

• Low PWM propagation delay (< 20 ns)

• Current sense monitor (I_MON

)

• Temperature monitor (T_MON

• Over temperature alert

)

• HS MOSFET over-current and short alert

• Under voltage lockout for V_DRVand BOOT

The

internal

power

MOSFETs

utilize

Vishay's

state-of-the-art TrenchFET^®Gen IV technology that delivers

industry bench mark performance to significantly reduce

switching and conduction losses.

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

The SiC840 incorporates an advanced MOSFET gate driver

IC that features high current driving capability, adaptive

dead-time control, and integrated bootstrap switch, a

thermal monitor that alerts the system of excessive junction

temperature. This driver is also compatible with wide range

of PWM controllers with the support of both 3.3 V and 5 V

PWM logic with tri-state. Diode emulation mode can be

enabled at light loads through the use of GLCTRL signal.

The device also integrates a current monitor to provide a real

time scale down of inductor current (I_MON). A temperature

monitor provides the system an indication of the power

stage internal temperature (T_MON) and can be used to

throttle the system operation down to a safer level if needed.

The device also integrates fault alerts such as HS FET

overcurrent, over temperature and HS MOSFET short

failures.

APPLICATIONS

• Synchronous buck converters

• Multi-phase VRDs for CPU, GPU, and memory

• DC/DC VR modules

EFFICIENCY

Axis Title

10000

1000

100

V_O= 1.8 V, F_SW= 600 kHz

V_O= 1.8 V, F_SW= 800 kHz

V_O= 1.2 V, F_SW= 800 kHz

V_O= 1.2 V, F_SW= 600 kHz

I_OUT- Output Current (A)

Fig. 1 - Efficiency vs. Output Current

(V_IN= 12 V, L = 150 nH, V_CC= V_DRV= 5 V)

S21-0582-Rev. C, 14-Jun-2021

Document Number: 63041

For technical questions, contact: powerictechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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