Datasheet > SIC779_12

SIC779_12

更新时间： 2024-11-21 12:22:47

品牌	Logo	应用领域
威世 - VISHAY		服务器主板节能技术
页数	文件大小	规格书
17页	369K
描述
Integrated DrMOS Power Stage

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SIC779_12 数据手册

SiC779

Vishay Siliconix

Integrated DrMOS Power Stage

FEATURES

DESCRIPTION

•

Industry benchmark Gen III MOSFETs with

The SiC779 is an integrated solution that contains PWM

optimized n-channel MOSFETs (high side and low side) and

a full featured MOSFET driver IC. The device complies with

the Intel DrMOS standard for desktop and server V_corepower

stages. The SiC779 delivers up to 40 A continuous output

current and operates from an input voltage range of 3 V to

16 V. The integrated MOSFETs are optimized for output

voltages in the ranges of 0.8 V to 2.0 V with a nominal input

voltage of 12 V. The device can also deliver very high power

at 5 V output for ASIC applications.

integrated Schottky diode

•

DrMOS compliant gate driver IC

Enables V_coreswitching at 1 MHz

Easily achieve > 93 % efficiency in multi-phase,

low output voltage solutions

•

Low ringing on the VSWH pin reduces EMI

Pin compatible with DrMOS 6 x 6 version 4.0

Tri-state PWM input function prevents negative output

voltage swing

The SiC779 incorporates an advanced MOSFET gate driver

IC. This IC accepts a single PWM input from the V_Rcontroller

and converts it into the high side and low side MOSFET gate

drive signals. The driver IC is designed to implement the skip

mode (SMOD) function for light load efficiency improvement.

Adaptive dead time control also works to improve efficiency

at all load points. The SiC779 has a thermal warning (THDN)

that alerts the system of excessive junction temperature. The

driver IC includes an enable pin, UVLO and shoot through

protection.

The SiC779 is optimized for high frequency buck

applications. Operating frequencies in excess of 1 MHz can

easily be achieved.

The SiC779 is packaged in Vishay Siliconix high

performance PowerPAK MLP 6 x 6 package. Compact

co-packaging of components helps to reduce stray

inductance, and hence increases efficiency.

•

5 V logic levels on PWM

MOSFET threshold voltage optimized for 5 V driver bias

supply

Automatic skip mode operation (SMOD) for light load

efficiency

Under-voltage lockout

•

Built-in bootstrap schottky diode

Adaptive deadtime and shoot through protection

Thermal shutdown warning flag

Low profile, thermally enhanced PowerPAK^®MLP 6 x 6

40 pin package

•

Halogen-free according to IEC 61249-2-21 definition

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

CPU and GPU core voltage regulation

Server, computer, workstation, game console, graphics

boards, PC

SiC779 APPLICATION DIAGRAM

5 V

CIN

SMOD

DSBL#

PWM

BOOT

SWH

PHASE

THDN

SiC779CD

Figure 1

Document Number: 67538

S11-0703-Rev. B, 18-Apr-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...17

中文翻译

下载PDF

与SIC779_12相关器件

型号	品牌	获取价格	描述	数据表
SIC779CD-T1-GE3	VISHAY	获取价格	Integrated DrMOS Power Stage
SIC779DB	VISHAY	获取价格	Integrated DrMOS Power Stage
SIC780	VISHAY	获取价格	Integrated DrMOS Power Stage
SIC780A	VISHAY	获取价格	Integrated DrMOS Power Stage
SIC780ACD-T1-GE3	VISHAY	获取价格	Integrated DrMOS Power Stage
SIC780CD-T1-GE3	VISHAY	获取价格	Integrated DrMOS Power Stage
SIC780DB	VISHAY	获取价格	Integrated DrMOS Power Stage
SIC781CD	VISHAY	获取价格	Delivers up to 50 A continuous current
SiC781CD-T1-GE3	VISHAY	获取价格	Delivers up to 50 A continuous current
SiC781DB	VISHAY	获取价格	Delivers up to 50 A continuous current

与SIC779_12相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

28
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

21
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

50
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

48

产品中心

服务支持

精选活动

关于我们

帮助中心

SIC779_12

SIC779_12 数据手册

与SIC779_12相关器件

与SIC779_12相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SIC779_12

SIC779_12 数据手册

与SIC779_12相关器件

与SIC779_12相关文章

您还可以找

您在本页遇到什么问题？