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SIC714CD10-T1-E3 PDF预览

SIC714CD10-T1-E3

更新时间: 2024-09-09 09:25:39
品牌 Logo 应用领域
威世 - VISHAY 驱动器MOSFET驱动器驱动程序和接口开关接口集成电路
页数 文件大小 规格书
10页 187K
描述
Fast Switching MOSFETs With Integrated Driver

SIC714CD10-T1-E3 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:DFN包装说明:HVQCCN,
针数:68Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.42Is Samacsys:N
高边驱动器:YES接口集成电路类型:AND GATE BASED MOSFET DRIVER
JESD-30 代码:S-XQCC-N68JESD-609代码:e3
长度:10 mm湿度敏感等级:1
功能数量:1端子数量:68
封装主体材料:UNSPECIFIED封装代码:HVQCCN
封装形状:SQUARE封装形式:CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度):245认证状态:Not Qualified
座面最大高度:0.9 mm最大供电电压:5.5 V
最小供电电压:4.5 V标称供电电压:5 V
电源电压1-最大:15 V电源电压1-分钟:3 V
表面贴装:YES端子面层:MATTE TIN
端子形式:NO LEAD端子节距:0.5 mm
端子位置:QUAD处于峰值回流温度下的最长时间:40
断开时间:0.032 µs接通时间:0.066 µs
宽度:10 mmBase Number Matches:1

SIC714CD10-T1-E3 数据手册

 浏览型号SIC714CD10-T1-E3的Datasheet PDF文件第2页浏览型号SIC714CD10-T1-E3的Datasheet PDF文件第3页浏览型号SIC714CD10-T1-E3的Datasheet PDF文件第4页浏览型号SIC714CD10-T1-E3的Datasheet PDF文件第5页浏览型号SIC714CD10-T1-E3的Datasheet PDF文件第6页浏览型号SIC714CD10-T1-E3的Datasheet PDF文件第7页 
SiC714CD10  
Vishay Siliconix  
Fast Switching MOSFETs With Integrated Driver  
FEATURES  
PRODUCT SUMMARY  
Input Voltage Range  
Low-side MOSFET control pin for  
prebias start-up  
3.3 to 15 V  
0.5 to 6 V  
Output Voltage Range  
Operating Frequency  
Undervoltage Lockout for safe operation  
Internal boostrap diode reduces  
component count  
100 kHz to 1 MHz  
Up to 27 A  
Continuous Output Current  
Peak Efficiency  
Break-Before-Make operation  
Turn-on/Turn-off Capability  
Compatible with any single or multi-phase PWM  
controller  
Low profile, thermally enhanced PowerPAK® MLF  
10 x 10 Package  
> 94 % at 300 kHz  
10 %  
Optimized Duty Cycle Ratio  
PowerPAK MLF 10 x 10  
1
APPLICATIONS  
DC-to-DC Point-of-Load Converters  
- 3.3 V, 5 V, or 12 V Intermediate BUS  
- Examples  
- 12 VIN/0.8 - 2.5 VOUT  
- 5 VIN/0.8 - 1.5 VOUT  
Servers and Computers  
Bottom View  
Ordering Information: SiC714CD10-T1  
Single and Multi-Phase Conversion  
SiC714CD10-T1-E3 (Lead (Pb)-free)  
*see page 2 for peak temperature  
DESCRIPTION  
The SiC714CD10 is an integrated solution which contains  
two PWM-optimized MOSFETs (high side and low side  
MOSFETs) and a driver IC. Integrating the driver allows bet-  
ter optimization of Power MOSFETs. This minimizes the  
losses and provides better performance at higher frequency.  
The SiC714CD10 is packed in Vishay Siliconix’s high perfor-  
mance PowerPAK MLF 10 x 10 package. Compact copack-  
ing of components helps to reduce stray inductance, and  
hence increases efficiency.  
FUNCTIONAL BLOCK DIAGRAM  
C
BOOT  
V
DD  
V
IN  
UVLO  
SHDN  
+
-
BBM  
SW  
V
DD  
PWM  
SYNC  
CGND  
PGND  
Figure 1.  
* Pb containing terminations are not RoHS compliant, exemptions may apply.  
Document Number: 73569  
S-62659–Rev. C, 25-Dec-06  
www.vishay.com  
1

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