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SIC730CD9-T1-E3 PDF预览

SIC730CD9-T1-E3

更新时间: 2024-11-20 15:51:15
品牌 Logo 应用领域
威世 - VISHAY 驱动接口集成电路驱动器
页数 文件大小 规格书
8页 535K
描述
IC AND GATE BASED MOSFET DRIVER, QCC32, 9 X 9 MM, MLF-32, MOSFET Driver

SIC730CD9-T1-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DFN
包装说明:HQCCN, LCC32,.35SQ,32针数:32
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.46
高边驱动器:YES接口集成电路类型:AND GATE BASED MOSFET DRIVER
JESD-30 代码:S-XQCC-N32JESD-609代码:e3
湿度敏感等级:1功能数量:1
端子数量:32封装主体材料:UNSPECIFIED
封装代码:HQCCN封装等效代码:LCC32,.35SQ,32
封装形状:SQUARE封装形式:CHIP CARRIER, HEAT SINK/SLUG
峰值回流温度(摄氏度):245电源:5,4.5/20 V
认证状态:Not Qualified子类别:MOSFET Drivers
最大供电电压:5.5 V最小供电电压:4.5 V
标称供电电压:5 V表面贴装:YES
端子面层:MATTE TIN端子形式:NO LEAD
端子节距:0.8 mm端子位置:QUAD
处于峰值回流温度下的最长时间:40断开时间:0.034 µs
接通时间:0.057 µsBase Number Matches:1

SIC730CD9-T1-E3 数据手册

 浏览型号SIC730CD9-T1-E3的Datasheet PDF文件第2页浏览型号SIC730CD9-T1-E3的Datasheet PDF文件第3页浏览型号SIC730CD9-T1-E3的Datasheet PDF文件第4页浏览型号SIC730CD9-T1-E3的Datasheet PDF文件第5页浏览型号SIC730CD9-T1-E3的Datasheet PDF文件第6页浏览型号SIC730CD9-T1-E3的Datasheet PDF文件第7页 
SiC730CD9  
Vishay Siliconix  
New Product  
Fast Switching MOSFETs With Integrated Driver  
FEATURES  
PRODUCT SUMMARY  
• Low-side MOSFET control pin for  
Input Voltage Range  
Output Voltage Range  
Operating Frequency  
Continuous Output Current  
Peak Efficiency  
3.3 to 20 V  
0.5 to 6 V  
100 kHz to 1 MHz  
Up to 25 A  
97.5  
pre-bias start-up  
• Undervoltage Lockout for safe operation  
RoHS  
COMPLIANT  
• Internal boostrap diode reduces  
component count  
• Break-Before-Make operation  
• Turn-on/Turn-off Capability  
Optimized Duty Cycle Ratio  
40 %  
• Compatible with any single or multi-phase PWM  
controller  
PowerPAK MLF 9 x 9  
®
• Low profile, thermally enhanced PowerPAK MLF  
9 x 9 Package  
APPLICATIONS  
• DC-to-DC Point-of-Load Converters  
- 3.3 V, 5 V, or 12 V Intermediate BUS  
- Examples  
- 12 V / 3.3 - 5 V  
IN  
OUT  
OUT  
- 5 V / 1.5 - 3.3 V  
IN  
• Servers and Computers  
Bottom View  
• Single and Multi-Phase Conversion  
Ordering Information: SiC730CD9-T1-E3 (Lead (Pb)–free)  
* see page 2 for peak temperature  
DESCRIPTION  
The SiC730CD9 is an integrated solution which con-  
tains two PWM-optimized MOSFETs (high side and  
low side MOSFETs) and a driver IC. Integrating the  
driver allows better optimization of Power MOSFETs.  
This minimizes the losses and provides better perfor-  
mance at higher frequency. The SiC730CD9 is packed  
in Vishay Siliconix’s high performance PowerPAK MLF  
9 x 9 package. Compact co-packing of components  
helps to reduce stray inductance, and hence increases  
efficiency.  
FUNCTIONAL BLOCK DIAGRAM  
C
BOOT  
V
DD  
V
IN  
UVLO  
SHDN  
+
-
BBM  
SW  
V
DD  
PWM  
SYNC  
CGND  
PGND  
Figure 1.  
Document Number: 73670  
S-61012–Rev. B, 12-Jun-06  
www.vishay.com  
1

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