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SIC711CD10-T1-E3 PDF预览

SIC711CD10-T1-E3

更新时间: 2024-09-09 19:57:11
品牌 Logo 应用领域
威世 - VISHAY 驱动接口集成电路驱动器
页数 文件大小 规格书
8页 133K
描述
IC AND GATE BASED MOSFET DRIVER, QCC68, 10 X 10 MM, ROHS COMPLIANT, MLF-68, MOSFET Driver

SIC711CD10-T1-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DFN
包装说明:HVQCCN, LCC68,.4SQ,20针数:68
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.33
其他特性:UNDERVOLTAGE LOCKOUT高边驱动器:YES
接口集成电路类型:AND GATE BASED MOSFET DRIVERJESD-30 代码:S-XQCC-N68
JESD-609代码:e3长度:10 mm
湿度敏感等级:1功能数量:1
端子数量:68封装主体材料:UNSPECIFIED
封装代码:HVQCCN封装等效代码:LCC68,.4SQ,20
封装形状:SQUARE封装形式:CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度):245电源:5 V
认证状态:Not Qualified座面最大高度:0.9 mm
子类别:MOSFET Drivers最大供电电压:5.5 V
最小供电电压:4.5 V标称供电电压:5 V
电源电压1-最大:16 V电源电压1-分钟:3 V
表面贴装:YES端子面层:MATTE TIN
端子形式:NO LEAD端子节距:0.5 mm
端子位置:QUAD处于峰值回流温度下的最长时间:40
断开时间:0.057 µs接通时间:0.06 µs
宽度:10 mmBase Number Matches:1

SIC711CD10-T1-E3 数据手册

 浏览型号SIC711CD10-T1-E3的Datasheet PDF文件第2页浏览型号SIC711CD10-T1-E3的Datasheet PDF文件第3页浏览型号SIC711CD10-T1-E3的Datasheet PDF文件第4页浏览型号SIC711CD10-T1-E3的Datasheet PDF文件第5页浏览型号SIC711CD10-T1-E3的Datasheet PDF文件第6页浏览型号SIC711CD10-T1-E3的Datasheet PDF文件第7页 
SiC711CD10  
Vishay Siliconix  
New Product  
Fast Switching MOSFETs With Integrated Driver  
FEATURES  
PRODUCT SUMMARY  
Input Voltage Range  
Low-side MOSFET control pin for pre-  
bias start-up  
3.3 to 16 V  
0.5 to 6 V  
Pb-free  
Available  
Output Voltage Range  
Operating Frequency  
Undervoltage Lockout for safe operation  
Internal boostrap diode reduces  
component count  
RoHS*  
100 kHz to 1 MHz  
Up to 25 A  
COMPLIANT  
Continuous Output Current  
Peak Efficiency  
Break-Before-Make operation  
Turn-on/Turn-off Capability  
Compatible with any single or multi-phase PWM  
controller  
> 96 % at 300 kHz  
40 %  
Optimized Duty Cycle Ratio  
PowerPAK MLF 10 x 10  
Low profile, thermally enhanced PowerPAK® MLF  
10 x 10 Package  
1
APPLICATIONS  
DC-to-DC Point-of-Load Converters  
- 3.3 V, 5 V, or 12 V Intermediate BUS  
- Examples  
- 12 VIN/3.3 - 5 VOUT  
- 5 VIN/1.5 - 3.3 VOUT  
- 3.3 VIN/1.0 - 2.5 VOUT  
Servers and Computers  
Bottom View  
Ordering Information: SiC711CD10-T1  
SiC711CD10-T1-E3 (Lead (Pb)-free)  
*see page 2 for peak temperature  
Single and Multi-Phase Conversion  
DESCRIPTION  
The SiC711CD10 is an integrated solution which contains  
two PWM-optimized MOSFETs (high side and low side  
MOSFETs) and a driver IC. Integrating the driver allows bet-  
ter optimization of Power MOSFETs. This minimizes the  
losses and provides better performance at higher frequency.  
The SiC711CD10 is packed in Vishay Siliconix’s high perfor-  
mance PowerPAK MLF 10 x 10 package. Compact co-pack-  
ing of components helps to reduce stray inductance, and  
hence increases efficiency.  
FUNCTIONAL BLOCK DIAGRAM  
C
BOOT  
V
DD  
V
IN  
UVLO  
SHDN  
+
-
BBM  
SW  
V
DD  
PWM  
SYNC  
CGND  
PGND  
Figure 1.  
* Pb containing terminations are not RoHS compliant, exemptions may apply.  
Document Number: 73486  
S-62659–Rev. C, 25-Dec-06  
www.vishay.com  
1

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