Datasheet > SIA414DJ_08

SIA414DJ_08

更新时间： 2024-11-09 09:25:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	193K
描述
N-Channel 8-V (D-S) MOSFET

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SIA414DJ_08 数据手册

New Product

SiA414DJ

Vishay Siliconix

N-Channel 8-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^a

TrenchFET^®Power MOSFET

New Thermally Enhanced PowerPAK^®

SC-70 Package

0.011 at V_GS= 4.5 V

0.013 at V_GS= 2.5 V

0.016 at V_GS= 1.8 V

0.022 at V_GS= 1.5 V

0.041 at V_GS= 1.2 V

RoHS

COMPLIANT

- Small Footprint Area

19 nC

APPLICATIONS

•

Load Switch for Portable Applications

PowerPAK SC-70-6L-Single

Marking Code

A C X

X X X

Part # code

Lot Traceability

and Date code

2.05 mm

Ordering Information: SiA414DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

12^a

T_C= 25 °C

_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

12^{a, b, c}

11.6^{b, c}

I_DM

I_S

Pulsed Drain Current

12^a

2.9^{b, c}

_C= 25 °C

Continuous Source-Drain Diode Current

T_A= 25 °C

T_C= 25 °C

_C= 70 °C

P_D

Maximum Power Dissipation

3.5^{b, c}

T_A= 25 °C

T_A= 70 °C

2.2^{b, c}

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

- 55 to 150

°C

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

R_thJC

Typical

Maximum

Unit

Maximum Junction-to-Ambient^{b, f}

Maximum Junction-to-Case (Drain)

t ≤ 5 s

Steady State

°C/W

5.3

6.5

Notes:

a. Package limited

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 80 °C/W.

Document Number: 73954

S-80435-Rev. B, 03-Mar-08

www.vishay.com

12 3 4 5 6 7...9

中文翻译

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与SIA414DJ_08相关器件

型号	品牌	获取价格	描述	数据表
SIA414DJ-T1-GE3	VISHAY	获取价格	N-Channel 8-V (D-S) MOSFET
SIA415DJ	VISHAY	获取价格	P-Channel 20-V (D-S) MOSFET
SIA415DJ-T1-E3	VISHAY	获取价格	Power Field-Effect Transistor, 8.4A I(D), 20V, 0.035ohm, 1-Element, P-Channel, Silicon, Me
SIA415DJ-T1-GE3	VISHAY	获取价格	MOSFET P-CH 20V 12A SC70-6
SIA416DJ	VISHAY	获取价格	N-Channel 100 V (D-S) MOSFET
SIA416DJ-T1-GE3	VISHAY	获取价格	Power Field-Effect Transistor, 11.3A I(D), 100V, 0.083ohm, 1-Element, N-Channel, Silicon,
SIA417DJ	VISHAY	获取价格	P-Channel 8-V (D-S) MOSFET
SIA417DJ-T1-GE3	VISHAY	获取价格	P-Channel 8-V (D-S) MOSFET
SIA419DJ	VISHAY	获取价格	P-Channel 20-V (D-S) MOSFET
SIA419DJ-T1-E3	VISHAY	获取价格	Power Field-Effect Transistor, 12A I(D), 20V, 0.03ohm, 1-Element, P-Channel, Silicon, Meta

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