Datasheet > SiA431DJ

SiA431DJ

更新时间： 2024-09-17 14:54:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	231K
描述
P-Channel 20 V (D-S) MOSFET

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SiA431DJ 数据手册

SiA431DJ

Vishay Siliconix

www.vishay.com

P-Channel 20 V (D-S) MOSFET

FEATURES

• TrenchFET^®power MOSFET

• New thermally enhanced PowerPAK^®SC-70

package

PowerPAK^®SC-70-6L Single

- Small footprint area

- Low on-resistance

• 100 % R_gtested

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Top View

Bottom View

Marking code: BK

APPLICATIONS

PRODUCT SUMMARY

V_DS(V)

• Load switch, PA switch

and battery switch for

portable devices

-20

R_DS(on)max. () at V_GS= -4.5 V

R_DS(on)max. () at V_GS= -2.5 V

R_DS(on)max. () at V_GS= -1.8 V

R_DS(on)max. () at V_GS= -1.5 V

Q_gtyp. (nC)

0.025

0.031

0.041

0.070

I_D(A) ^a

-12

P-Channel MOSFET

Configuration

Single

ORDERING INFORMATION

Package

PowerPAK SC-70

SiA431DJ-T1-GE3

SiA431DJ-T4-GE3

Lead (Pb)-free and halogen-free

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

-20

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

-12 ^a

Continuous drain current (T_J= 150 °C)

I_D

-9.6 ^{b, c}

-7.7 ^{b, c}

-30

Pulsed drain current

I_DM

I_S

T_C= 25 °C

-12 ^a

-2.9 ^{b, c}

3.5 ^{b, c}

2.2 ^{b, c}

-55 to +150

260

Continuous source-drain diode current

T_A= 25 °C

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Maximum power dissipation

P_D

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^{d, e}

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction-to-ambient ^{b, f}

Maximum junction-to-case (drain)

SYMBOL

R_thJA

R_thJC

TYPICAL

MAXIMUM

UNIT

t  5 s

Steady state

5.3

6.5

°C/W

Notes

a. Package limited

b. Surface mounted on 1" x 1" FR4 board

c. t = 5 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 80 °C/W

S12-1141-Rev. B, 21-May-12

Document Number: 65267

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与SiA431DJ相关器件

型号	品牌	获取价格	描述	数据表
SIA431DJ-T1-GE3	VISHAY	获取价格	TRANSISTOR 9.6 A, 20 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COM
SIA432DJ	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SIA432DJ-T1-GE3	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SIA433EDJ	VISHAY	获取价格	P-Channel 20-V (D-S) MOSFET
SIA433EDJ-T1-GE3	VISHAY	获取价格	P-Channel 20-V (D-S) MOSFET
SIA436DJ	VISHAY	获取价格	N-Channel 8 V (D-S) MOSFET
SiA4371EDJ	VISHAY	获取价格	P-Channel 30 V (D-S) MOSFET
SIA437DJ	VISHAY	获取价格	P-Channel 20 V (D-S) MOSFET
SiA440DJ	VISHAY	获取价格	N-Channel 40 V (D-S) MOSFET
SiA441DJ	VISHAY	获取价格	P-Channel 40 V (D-S) MOSFET

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