Datasheet > SiA430DJT

SiA430DJT

更新时间： 2024-09-16 14:56:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	304K
描述
N-Channel 20 V (D-S) MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SiA430DJT 数据手册

SiA430DJT

Vishay Siliconix

www.vishay.com

N-Channel 20 V (D-S) MOSFET

FEATURES

• TrenchFET^®power MOSFET

• Thermally enhanced PowerPAK^®SC-70 package

- Small footprint area

PRODUCT SUMMARY

V_DS(V)

R_DS(on)(Ω) MAX.

0.0135 at V_GS= 10 V

0.0185 at V_GS= 4.5 V

I_D(A) ^{b, c}Q_g(Typ.)

12 ^a

5.3 nC

10.8

- Ultra-thin 0.6 mm height

• 100 % R_gtested

Thin PowerPAK^®SC-70-6L Single

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

0.6 mm

• Load switch

• DC/DC conversion

Top View

Bottom View

Marking Code: AY

Ordering Information:

SiA430DJT-T1-GE3 (Lead (Pb)-free and halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

12 ^a

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

12 ^a

Continuous Drain Current (T_J= 150 °C)

I_D

12 ^{a, b, c}

10.1 ^{b, c}

12 ^a

2.9 ^{b, c}

Pulsed Drain Current (t = 100 μs)

I_DM

I_S

T_C= 25 °C

Continuous Source-Drain Diode Current

T_A= 25 °C

_C= 25 °C

_C= 70 °C

19.2

12.3

Maximum Power Dissipation

P_D

T_A= 25 °C

T_A= 70 °C

3.5 ^{b, c}

2.2 ^{b, c}

-55 to +150

260

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature) ^{d, e}

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum Junction-to-Ambient ^{b, f}

SYMBOL

TYPICAL

MAXIMUM

UNIT

t ≤ 5 s

Steady State

R_thJA

R_thJC

°C/W

Maximum Junction-to-Case (Drain)

5.3

6.5

Notes

a. Package limited

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See solder profile (www.vishay.com/doc?73257). The Thin PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 80 °C/W.

S14-2236-Rev. A, 10-Nov-14

Document Number: 62991

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...10

中文翻译

下载PDF

与SiA430DJT相关器件

型号	品牌	获取价格	描述	数据表
SIA430DJ-T1-GE3	VISHAY	获取价格	N-Channel 20-V (D-S) MOSFET
SiA431DJ	VISHAY	获取价格	P-Channel 20 V (D-S) MOSFET
SIA431DJ-T1-GE3	VISHAY	获取价格	TRANSISTOR 9.6 A, 20 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COM
SIA432DJ	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SIA432DJ-T1-GE3	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SIA433EDJ	VISHAY	获取价格	P-Channel 20-V (D-S) MOSFET
SIA433EDJ-T1-GE3	VISHAY	获取价格	P-Channel 20-V (D-S) MOSFET
SIA436DJ	VISHAY	获取价格	N-Channel 8 V (D-S) MOSFET
SiA4371EDJ	VISHAY	获取价格	P-Channel 30 V (D-S) MOSFET
SIA437DJ	VISHAY	获取价格	P-Channel 20 V (D-S) MOSFET

与SiA430DJT相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

4
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

4
SL74HC10N：高性能三输入与非门解析
2024-09-03

83
AIC1781A 电池充电控制器深度解析
2024-09-03

75

产品中心

服务支持

精选活动

关于我们

帮助中心

SiA430DJT

SiA430DJT 数据手册

与SiA430DJT相关器件

与SiA430DJT相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SiA430DJT

SiA430DJT 数据手册

与SiA430DJT相关器件

与SiA430DJT相关文章

您还可以找

您在本页遇到什么问题？