Datasheet > SI7403BDN

SI7403BDN

更新时间： 2024-02-10 06:24:21

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	106K
描述
P-Channel 20-V (D-S) MOSFET

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技术参数
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SI7403BDN 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.83	Base Number Matches：	1

SI7403BDN 数据手册

Si7403BDN

Vishay Siliconix

New Product

SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

= 25_C

−8

−20

= −2.6 A, V = 0 V

Body Diode Voltage

−0.7

−1.2

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

= −4.1 A, di/dt = 100 A/ms, T = 25_C

Notes

a. Pulse test; pulse width v 300 ms, duty cycle v 2%.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

Document Number: 73333

S-50519—Rev. A, 21-Mar-05

www.vishay.com

1 234 5 6 7 8

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