Datasheet > SI7138DP-T1-GE3

SI7138DP-T1-GE3

更新时间： 2024-11-21 19:34:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	111K
描述
N-CH 60-V REDUCED QG,FAST SWITCH MOSFET - Tape and Reel

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

SI7138DP-T1-GE3 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.82	JESD-609代码：	e3
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
端子面层：	PURE MATTE TIN	处于峰值回流温度下的最长时间：	30
Base Number Matches：	1

SI7138DP-T1-GE3 数据手册

Si7138DP

Vishay Siliconix

N-Channel 60 V (D-S) Reduced Q , Fast Switching MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

Definition

Low Thermal Resistance PowerPAK^®Package

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^a

0.0078 at V_GS= 10 V

0.009 at V_GS= 6 V

•

100 % R_gand Avalanche Tested

Compliant to RoHS Directive 2002/95/EC

PowerPAK SO-8

APPLICATIONS

•

Primary Side Switch

- Very Low R_gand Q_gd, Critical for Minimizing Losses

6.15 mm

5.15 mm

Bottom View

Ordering Information: Si7138DP-T1-E3 (Lead (Pb)-free)

Si7138DP-T1-GE3 (Lead (Pb)-free) and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C= 25 °C

_C= 70 °C

19.7^{b, c}

15.7^{b, c}

30^a

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

T_A= 25 °C

Continuous Source-Drain Diode Current

4.5^{b, c}

I_AS

Avalanche Current

L = 0.1 mH

E_AS

Single-Pulse Avalanche Energy

T_C= 25 °C

T_C= 70 °C

61.5

P_D

Maximum Power Dissipation

5.4^{b, c}

3.5^{b, c}

T_A= 25 °C

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

- 55 to 150

°C

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

Typical

Maximum

Unit

Maximum Junction-to-Ambient^{b, f}

Maximum Junction-to-Case (Drain)

t ≤ 10 s

Steady State

°C/W

R_thJC

1.0

1.5

Notes:

a. Package limited.

b. Surface mounted on 1” x 1” FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/ppg?73461). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 65 °C/W.

Document Number: 73530

S11-0212-Rev. C, 14-Feb-11

www.vishay.com

12 3 4 5 6 7

中文翻译

下载PDF

SI7138DP-T1-GE3 替代型号

型号	品牌	替代类型	描述	数据表
SI7138DP-T1-E3	VISHAY	完全替代	Trans MOSFET N-CH 60V 19.7A 8-Pin PowerPAK SO T/R
SI7478DP-T1-GE3	VISHAY	类似代替	N-Channel 60-V (D-S) MOSFET
SI7478DP-T1-E3	VISHAY	功能相似	N-Channel 60-V (D-S) MOSFET

与SI7138DP-T1-GE3相关器件

型号	品牌	获取价格	描述	数据表
Si7139DP	VISHAY	获取价格	P-Channel 30 V (D-S) MOSFET
SI7139DP-T1-GE3	VISHAY	获取价格	Trans MOSFET P-CH 30V 22.4A 8-Pin PowerPAK SO T/R
SI7141DP	VISHAY	获取价格	P-Channel 20-V (D-S) MOSFET
SI7141DP-T1-GE3	VISHAY	获取价格	P-Channel 20-V (D-S) MOSFET
Si7143DP	VISHAY	获取价格	P-Channel 30 V (D-S) MOSFET
SI7145DP	VISHAY	获取价格	P-Channel 30-V (D-S) MOSFET
SI7145DP-T1-GE3	VISHAY	获取价格	P-Channel 30-V (D-S) MOSFET
SI7148DP	VISHAY	获取价格	N-Channel 75-V (D-S) MOSFET
SI7148DP-T1-E3	VISHAY	获取价格	MOSFET N-CH 75V 28A PPAK SO-8
SI7148DP-T1-GE3	VISHAY	获取价格	MOSFET N-CH 75V 28A PPAK SO-8

与SI7138DP-T1-GE3相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

31
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

22
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

51
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

50

产品中心

服务支持

精选活动

关于我们

帮助中心

SI7138DP-T1-GE3

SI7138DP-T1-GE3 技术参数

SI7138DP-T1-GE3 数据手册

SI7138DP-T1-GE3 替代型号

与SI7138DP-T1-GE3相关器件

与SI7138DP-T1-GE3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SI7138DP-T1-GE3

SI7138DP-T1-GE3 技术参数

SI7138DP-T1-GE3 数据手册

SI7138DP-T1-GE3 替代型号

与SI7138DP-T1-GE3相关器件

与SI7138DP-T1-GE3相关文章

您还可以找

您在本页遇到什么问题？