Datasheet > Si7172ADP

Si7172ADP

更新时间： 2024-11-26 14:55:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	235K
描述
N-Channel 200 V (D-S) MOSFET

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Si7172ADP 数据手册

Si7172ADP

Vishay Siliconix

www.vishay.com

N-Channel 200 V (D-S) MOSFET

FEATURES

PowerPAK^®SO-8 Single

• ThunderFET technology optimizes balance

of R_DS(on), Q_g, Q_sw, and Q_oss

• 100 % R_gand UIS tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• Fixed telecom

Top View

Bottom View

• DC/DC converter

PRODUCT SUMMARY

V_DS(V)

200

0.070

0.080

• Primary and secondary side switch

• Synchronous rectification

R_DS(on)max. () at V_GS= 10 V

R_DS(on)max. () at V_GS= 7.5 V

Q_gtyp. (nC)

I_D(A) ^a

17.2

N-Channel MOSFET

Configuration

Single

ORDERING INFORMATION

Package

PowerPAK SO-8

Lead (Pb)-free and halogen-free

Si7172ADP-T1-RE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

200

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

T_C= 25 °C

17.2

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

13.8

Continuous drain current (T_J= 150 °C)

I_D

5.3 ^{b, c}

4.2 ^{b, c}

Pulsed drain current (t = 100 μs)

I_DM

I_S

T_C= 25 °C

T_A= 25 °C

4.5 ^{b, c}

Continuous source-drain diode current

Single pulse avalanche current

Single pulse avalanche Energy

I_AS

E_AS

11.25

L = 0.1 mH

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Maximum power dissipation

P_D

5 ^{b, c}

3.2 ^{b, c}

-55 to +150

260

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^{d, e}

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction-to-ambient ^{b, f}

Maximum junction-to-case (drain)

SYMBOL

R_thJA

R_thJC

TYPICAL

MAXIMUM

UNIT

t  10 s

Steady state

1.9

2.4

°C/W

Notes

a. T_C= 25 °C

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 65 °C/W

S17-1349-Rev. A, 04-Sep-17

Document Number: 75477

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与Si7172ADP相关器件

型号	品牌	获取价格	描述	数据表
SI7172ADP-T1-RE3	VISHAY	获取价格	MOSFET N-CHAN 200V POWERPAK SO-8
SI7172DP-T1-GE3	VISHAY	获取价格	N-Channel 200-V (D-S) MOSFET
SI7174DP	VISHAY	获取价格	N-Channel 75-V (D-S) MOSFET
SI7174DP-T1-GE3	VISHAY	获取价格	N-Channel 75-V (D-S) MOSFET
SI7178DP-T1-GE3	VISHAY	获取价格	N-Channel 100-V (D-S) MOSFET
SI7186DP	VISHAY	获取价格	N-Channel 80-V (D-S) MOSFET
SI7186DP-T1-E3	VISHAY	获取价格	N-Channel 80-V (D-S) MOSFET
SI7186DP-T1-GE3	VISHAY	获取价格	N-Channel 80-V (D-S) MOSFET
Si7190ADP	VISHAY	获取价格	N-Channel 250 V (D-S) MOSFET
SI7190DP-T1-GE3	VISHAY	获取价格	MOSFET N-CH D-S 250V 8-SOIC

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