SI5461EDC

更新时间： 2024-11-09 09:25:59

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管
页数	文件大小	规格书
5页	97K
描述
P-Channel 20-V (D-S) MOSFET

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中文翻译

获取价格

技术参数
数据手册

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SI5461EDC 技术参数

生命周期：	Transferred	包装说明：	,
针数：	8	Reach Compliance Code：	unknown
风险等级：	5.59	Is Samacsys：	N
Base Number Matches：	1

SI5461EDC 数据手册

Si5461EDC

Vishay Siliconix

P-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(Ω)

I_D(A)

0.045 @ V = --4.5 V

-- 6 . 2

-- 5 . 4

-- 4 . 6

-- 2 0

0.060 @ V = --2.5 V

0.082 @ V = --1.8 V

1206-8 ChipFETt

5.4 kΩ

Marking Code

LA XX

Lot Traceability

and Date Code

Part #

Code

Bottom View

P-Channel MOSFET

Ordering Information: Si5461EDC-T1

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

-- 2 0

12

= 25_C

= 85_C

-- 4 . 5

-- 3 . 2

-- 6 . 2

-- 4 . 5

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

-- 2 0

Continuous Source Current

-- 2 . 1

2.5

-- 1 . 1

1.3

= 25_C

= 85_C

Maximum Power Dissipation

1.3

0.7

Operating Junction and Storage Temperature Range

T , T

--55 to 150

260

stg

c, d

Soldering Recommendations (Peak Temperature)

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t ≤ 5 sec

Maximum Junction-to-Ambient

thJA

thJF

Steady State

_C/W

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

b. When using HBM. The MM rating is 300 V.

c. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singula-

tion process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder inter-

connection.

d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

Document Number: 71413

S-21251—Rev. C, 05-Aug-02

www.vishay.com

2-1

12 3 4 5

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