New Product
Si5471DC
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
I
D (A)a, g
- 6
Definition
•
•
TrenchFET® Power MOSFET
Compliant to RoHS Directive 2002/95/EC
0.020 at VGS = - 4.5 V
0.028 at VGS = - 2.5 V
0.062 at VGS = - 1.8 V
- 6
- 20
30 nC
APPLICATIONS
- 6
•
Load Switches
- Notebook
- Netbook
1206-8 ChipFET®
S
1
D
D
D
G
D
D
D
G
S
D
Bottom View
P-Channel MOSFET
Ordering Information:
Si5471DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
- 20
12
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
V
- 6a
T
C = 25 °C
- 6a
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)
ID
- 6a, b, c
- 6a, b, c
- 25
- 5.2
- 2.1b, c
A
Pulsed Drain Current
IDM
IS
T
T
C = 25 °C
A = 25 °C
Continuous Source-Drain Diode Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
6.3
4
2.5b, c
1.6b, c
PD
Maximum Power Dissipation
W
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)e, f
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
RthJF
Typical
40
Maximum
Unit
Maximum Junction-to-Ambienta, c, d
t ≤ 5 s
Steady State
50
°C/W
Maximum Junction-to-Foot (Drain)
15
20
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 95 °C/W.
e. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
g. TC = 25 °C.
Document Number: 64988
S09-1000-Rev. A, 01-Jun-09
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