Datasheet > SI5473DC

SI5473DC

更新时间： 2024-11-08 21:53:39

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描述
P-Channel 12-V (D-S) MOSFET

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SI5473DC 数据手册

Si5473DC

Vishay Siliconix

New Product

P-Channel 12-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFETS

V_DS(V)

r_DS(on)(W)

I_D(A)

D Low r_DS(on)and Excellent Power Handling In

Compact Footprint

0.027 @ V = -4.5 V

-8.1

-7.3

-6.3

APPLICATIONS

-12

0.0335 @ V = -2.5 V

D Battery and Load Switch for Portable Devices

0.045 @ V = -1.8 V

1206-8 ChipFETr

Marking Code

BI XXX

Lot Traceability

and Date Code

Part #

Code

Bottom View

Ordering Information: Si5473DC-T1

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

-12

= 25_C

= 85_C

-5.9

-4.3

-8.1

-5.9

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

"20

Continuous Source Current

-2.1

2.5

-1.1

1.3

= 25_C

= 85_C

Maximum Power Dissipation

1.3

0.7

Operating Junction and Storage Temperature Range

T , T

-55 to 150

260

stg

b, c

Soldering Recommendations (Peak Temperature)

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 5 sec

Maximum Junction-to-Ambient

thJA

thJF

Steady State

_C/W

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singula-

tion process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder inter-

connection.

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

Document Number: 72261

S-31265—Rev. A, 16-Jun-03

www.vishay.com

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