Datasheet > SI5463EDC_08

SI5463EDC_08

更新时间： 2024-11-09 06:11:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	141K
描述
P-Channel 20-V (D-S) MOSFET

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SI5463EDC_08 数据手册

Si5463EDC

Vishay Siliconix

P-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(Ω)

I_D(A)

0.062 @ V = --4.5 V

-- 5 . 1

-- 4 . 9

-- 4 . 4

-- 3 . 7

0.068@ V = --3.6 V

-- 2 0

0.085 @ V = --2.5 V

0.120 @ V = --1.8 V

1206-8 ChipFETt

5.4 kΩ

Marking Code

LB XX

Lot Traceability

and Date Code

Part #

Code

P-Channel MOSFET

Bottom View

Ordering Information: Si5463EDC-T1

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

-- 2 0

12

= 25_C

= 85_C

-- 3 . 8

-- 2 . 7

-- 5 . 1

-- 3 . 7

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

-- 1 5

Continuous Source Current

-- 1 . 9

2.3

-- 1 . 0

1.25

0.65

= 25_C

= 85_C

Maximum Power Dissipation

1.2

Operating Junction and Storage Temperature Range

T , T

--55 to 150

260

stg

c, d

Soldering Recommendations (Peak Temperature)

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t ≤ 5 sec

Steady State

100

Maximum Junction-to-Ambient

thJA

thJF

_C/W

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

b. When using HBM. The MM rating is 300 V

c. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singula-

tion process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder inter-

connection.

d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

Document Number: 71364

S-21251—Rev. C, 05-Aug-02

www.vishay.com

2-1

12 3 4 5 6

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