5秒后页面跳转
SI5463EDC PDF预览

SI5463EDC

更新时间: 2024-11-08 22:14:03
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 113K
描述
P-Channel 20-V (D-S) MOSFET

SI5463EDC 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.84
配置:Single最大漏极电流 (Abs) (ID):3.8 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):1.25 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

SI5463EDC 数据手册

 浏览型号SI5463EDC的Datasheet PDF文件第2页浏览型号SI5463EDC的Datasheet PDF文件第3页浏览型号SI5463EDC的Datasheet PDF文件第4页浏览型号SI5463EDC的Datasheet PDF文件第5页 
Si5463EDC  
Vishay Siliconix  
P-Channel 20-V (D-S) MOSFET  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) ()  
ID (A)  
0.062 @ V = --4.5 V  
-- 5 . 1  
-- 4 . 9  
-- 4 . 4  
-- 3 . 7  
GS  
0.068@ V = --3.6 V  
GS  
-- 2 0  
0.085 @ V = --2.5 V  
GS  
0.120 @ V = --1.8 V  
GS  
S
1206-8 ChipFETt  
1
D
G
5.4 k  
D
D
D
D
Marking Code  
LB XX  
D
G
S
Lot Traceability  
and Date Code  
D
Part #  
Code  
P-Channel MOSFET  
Bottom View  
Ordering Information: Si5463EDC-T1  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
5 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
-- 2 0  
DS  
V
12  
GS  
T
= 25_C  
= 85_C  
-- 3 . 8  
-- 2 . 7  
-- 5 . 1  
-- 3 . 7  
A
a
Continuous Drain Current (T = 150_C)  
I
J
D
T
A
A
Pulsed Drain Current  
I
-- 1 5  
DM  
a
Continuous Source Current  
I
-- 1 . 9  
2.3  
-- 1 . 0  
1.25  
0.65  
S
T
= 25_C  
= 85_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
1.2  
Operating Junction and Storage Temperature Range  
T , T  
--55 to 150  
260  
J
stg  
_C  
c, d  
Soldering Recommendations (Peak Temperature)  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t 5 sec  
Steady State  
Steady State  
45  
84  
20  
55  
100  
25  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJF  
_C/W  
Maximum Junction-to-Foot (Drain)  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
b. When using HBM. The MM rating is 300 V  
c. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singula-  
tion process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder inter-  
connection.  
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.  
Document Number: 71364  
S-21251—Rev. C, 05-Aug-02  
www.vishay.com  
2-1  

与SI5463EDC相关器件

型号 品牌 获取价格 描述 数据表
SI5463EDC_08 VISHAY

获取价格

P-Channel 20-V (D-S) MOSFET
SI5463EDC-T1 VISHAY

获取价格

P-Channel 20-V (D-S) MOSFET
SI5463EDC-T1-GE3 VISHAY

获取价格

Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET
SI5465EDC VISHAY

获取价格

P-Channel 12-V (D-S) MOSFET
SI5465EDC-E3 VISHAY

获取价格

TRANSISTOR 5000 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, 1206-8, CHIPFET-8, FET Gene
SI54-680 DELTA

获取价格

SMT Power Inductor
SI5468DC VISHAY

获取价格

N-Channel 30-V (D-S) MOSFET
SI5468DC-T1-GE3 VISHAY

获取价格

Small Signal Field-Effect Transistor, 6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-o
SI54-6R8 DELTA

获取价格

SMT Power Inductor
SI5471DC VISHAY

获取价格

P-Channel 20-V (D-S) MOSFET