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SI4842DY-E3

更新时间: 2024-11-23 19:53:35
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 67K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

SI4842DY-E3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:compliant
风险等级:5.82配置:Single
最大漏极电流 (Abs) (ID):15 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e3湿度敏感等级:1
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):3.5 W
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)Base Number Matches:1

SI4842DY-E3 数据手册

 浏览型号SI4842DY-E3的Datasheet PDF文件第2页浏览型号SI4842DY-E3的Datasheet PDF文件第3页浏览型号SI4842DY-E3的Datasheet PDF文件第4页浏览型号SI4842DY-E3的Datasheet PDF文件第5页 
Si4842DY  
Vishay Siliconix  
N-Channel 30-V (D-S) MOSFET  
PRODUCT SUMMARY  
FEATURES  
VDS (V)  
rDS(on) ()  
ID (A)  
D TrenchFETr Power MOSFET  
D 100% Rg Tested  
0.0045 @ V = 10 V  
23  
19  
GS  
30  
0.006 @ V = 4.5 V  
GS  
D
SO-8  
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View  
Ordering Information: Si4842DY  
S
N-Channel MOSFET  
Si4842DY-T1 (with Tape and Reel)  
Si4842DY—E3 (Lead (Pb)-Free)  
Si4842DY-T1-E3 (Lead (Pb)-Free with Tape and Reel)  
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)  
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
30  
DS  
GS  
V
V
20  
T
= 25_C  
= 70_C  
23  
19  
15  
12  
A
a
Continuous Drain Current (T = 150_C)  
I
D
J
T
A
Pulsed Drain Current (10 ms Pulse Width)  
Continuous Source Current (Diode Conduction)  
Avalanche Current  
I
60  
A
DM  
a
I
2.9  
1.3  
S
I
50  
AS  
L = 0.1 mH  
Single Pulse Avalanche Energy  
E
125  
mJ  
AS  
T
= 25_C  
= 70_C  
3.5  
2.2  
1.6  
1
A
a
Maximum Power Dissipation  
P
D
W
T
A
Operating Junction and Storage Temperature Range  
T , T  
--55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t 10 sec  
Steady State  
Steady State  
29  
67  
13  
35  
80  
16  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJF  
_C/W  
Maximum Junction-to-Foot (Drain)  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 71325  
S-41576—Rev. D, 23-Aug-04  
www.vishay.com  
1

SI4842DY-E3 替代型号

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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI4842DY VISHAY

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