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SI4845DY

更新时间： 2024-11-19 06:11:35

品牌	Logo	应用领域
威世 - VISHAY		肖特基二极管
页数	文件大小	规格书
9页	134K
描述
P-Channel 20-V (D-S) MOSFET with Schottky Diode

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SI4845DY 数据手册

Si4845DY

Vishay Siliconix

New Product

P-Channel 20-V (D-S) MOSFET with Schottky Diode

FEATURES

MOSFET PRODUCT SUMMARY

D LITTLE FOOTr Plus Power MOSFET

APPLICATIONS

V_DS(V)

r_DS(on)(W)

I_D(A)^aQ_g(Typ)

0.210 @ V = –4.5 V

– 2.7

–20

2.9

COMPLIANT

0.345 @ V = –2.5 V

–2.1

D Asynchronous DC/DC Buck

SCHOTTKY PRODUCT SUMMARY

V_f(V)

V_KA(V)

I_F(A)^a

Diode Forward Voltage

0.50 V @ 1 A

2.4

SO-8

Top View

P-Channel MOSFET

Ordering Information: Si4845DY-T1—E3 (Lead (Pb)–Free)

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage (MOSFET)

Reverse Voltage (Schottky)

–20

Gate-Source Voltage (MOSFET)

"12

= 25_C

– 2.7

–2.1

= 70_C

= 25_C

= 70_C

Continuous Drain Current (T = 150_C) (MOSFET)

b, c

–2.1

b, c

–1.7

Pulsed Drain Current (MOSFET)

–7

= 25_C

–2.4

Continuous Source Current (MOSFET Diode Conduction)

b, c

–1.9

Average Foward Current (Schottky)

Pulsed Foward Current (Schottky)

– 1

–7

= 25_C

= 70_C

= 25_C

= 70_C

2.75

1.75

Maximum Power Dissipation (Schottky)

b, c

1.75

b, c

1.1

Operating Junction and Storage Temperature Range

T , T

–55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambient (MOSFET and Schottky)

Maximum Junction-to-Foot (Drain) (MOSFET and Schottky)

71.5

thJA

thJF

C/W

Notes

a. Based on T = 25_C.

b. Surface Mounted on FR4 Board.

c. t v 10 sec.

d. Maximum under Steady State conditions is 120 _C/W.

Document Number: 73415

S-51110—Rev. B, 13-Jun-05

www.vishay.com

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